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CHA3689 参数 Datasheet PDF下载

CHA3689图片预览
型号: CHA3689
PDF下载: 下载PDF文件 查看货源
内容描述: 12.5-30GHz低噪声放大器 [12.5-30GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 10 页 / 261 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA3689
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3689 is a three-stage self biased
wide band monolithic low noise amplifier.
RFin
Vd1
Vd2
Vd3
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
B
D
RFout
Main Features
Broadband performance 12.5-30GHz
2.0dB noise figure
26dB gain (12.5-26GHz)
26dBm output IP3 (18-30GHz)
Low DC power consumption
Chip size: 2,45 x 1,21 x 0,1 mm
Gain & NF (dB)
Gain and NF @ 120 mA (BD grounded)
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
12
14
16
18
20
22
24
26
28
30
Gain
NF
Frequency (GHz)
On wafer typical measurements
Main Characteristics
Tamb = +25° Vd1=Vd2=Vd3 = +4V
C,
Symbol
NF
G
P1dB
Noise figure
Gain
Output power at 1dB gain compression
23
14
Pads B, D = GND (High current configuration)
Min
Typ
2.0
26
15
Parameter
Max
2.5
Unit
dB
dB
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA36897082 - 23 Mar 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09