CHA3666
Temp = +25°C
6-17GHz Low Noise Amplifier
Typical on wafer Measured Performance
Vd1=Vd2= +4V Pads:
P1,N2 = GND- Typical Id=80mA
Measurements on wafer (without bonding wires at the RF ports)
S parameters versus frequency
25
20
15
10
5
Sij (dB)
0
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
S21
S11
S22
NF versus frequency
6
5,5
5
4,5
Noise Figure (dB)
4
3,5
3
2,5
2
1,5
1
0,5
0
4
6
8
10
12
14
16
18
Frequency (GHz)
Ref. : DSCHA36666159 - 08 Jun 06
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
