CHA3666
Electrical Characteristics
Temp = +25°C, Pads:
P1,N2 = GND (1)
Symbol
Fop
G
∆G
NF
IS11I
IS22I
IP3
P1dB
Vd
Id
Parameter
Operating frequency range
Gain (2)
Gain flatness
Noise figure (2)
Input return loss (2)
Ouput return loss (2)
3rd order intercept point (2)
6-17GHz Low Noise Amplifier
Min
6
19
Typ
21
±0.5
1.8
2.5:1
2.0:1
26
Max
17
Unit
GHz
dB
dB
2
2.7:1
2.2:1
dB
dB
dB
dBm
dBm
V
Output power at 1dB gain comp.(2) (3)
Drain bias voltage
Drain bias current
15
75
17
4
80
86
mA
(1) The other pads are not connected
(2)
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(3)
P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 non connected. In
this case Id is around 85mA
Absolute Maximum Ratings
(1)
Temp = +25°C
Symbol
Vd
Pin
Top
Tj
Parameter
Drain bias voltage
RF input power
Operating temperature range (chip backside)
Junction temperature
Storage temperature range
Values
4.5
10
-40 to +85
175
Unit
V
dBm
°C
°C
Tstg
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA36666159 - 08 Jun 06
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
