CHA2693-QAG
Electrical Characteristics
18-30GHz Low Noise Amplifier
Tamb = +25° Vd = +4.0V, Vg1=Vg2 to adjust Id = 45 mA
C,
Symbol
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Parameter
Operating frequency range
Gain
Gain flatness
Noise figure (18 to 26 GHz)
Input VSWR (18 to 26 GHz)
Ouput VSWR (18 to 26 GHz)
3rd order intercept point
Output power at 1dB gain compression
Drain bias current
18
10
Min
18
10
13
±
2.0
3.0
3.0:1
3.0:1
20
12
45
55
dBm
dBm
mA
±
2.5
Typ
Max
30
Unit
Ghz
dB
dB
dB
These values are representative of onboard measurements as defined on the drawing 95542 (see
below).
Absolute Maximum Ratings
(1)
Tamb = +25°
C
Symbol
Vd
Vg
Pin
Tj
Parameter (1)
Drain bias voltage
Gate bias voltage
Maximum peak input power overdrive (2)
Junction Temperature (3)
Operating temperature range
Storage temperature range
Values
4.5
-2 to 0
+2.0
175
Unit
V
V
dBm
°
C
Top
Tstg
-40 to +85
-55 to +125
°
C
°
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) Thermal resistance to ground paddle = 170°
C/W fo r Tamb. = +85° (Vd=4v, Id=45mA)
C
Ref. : DSCHA2693QAG6332 - 28 Nov 06
2/12
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
