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CHA2693-QAG 参数 Datasheet PDF下载

CHA2693-QAG图片预览
型号: CHA2693-QAG
PDF下载: 下载PDF文件 查看货源
内容描述: 18-30GHz低噪声放大器 [18-30GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 12 页 / 414 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2693-QAG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2693-QAG is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard P-
HEMT process : 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in ROHS compliant SMD package.
Main Features
Broadband performance 18-30GHz
3.0dB noise figure, 18-26GHz
13dB gain,
±
2.0dB gain flatness
Low DC power consumption.
20dBm 3
rd
order intercept point
16L-QFN3x3 SMD package
20
18
16
Gain & NF ( dB )
14
12
10
8
6
4
2
0
12
14
16
18
CHA2693-QAG
( Vd=4V ; Id=45mA )
NF
dBS21
20
22
24
26
Frequency ( GHz )
28
30
32
34
Main Characteristics
Tamb = +25° Vd = +4.0V, Id = 45mA
C,
Symbol
NF
G
IP3
Parameter
Noise figure, 18-26GHz
Gain
3rd order intercept point
10
18
Min
Typ
3.0
13
20
Max
Unit
dB
dB
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA2693QAG6332 - 28 Nov 06
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09