TQP3M9006
High Linearity LNA Gain Block
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
-55 to 150 oC
+ 20 dBm
+7 V
Parameter
Vdd
Min Typ Max Units
Storage Temperature
RF Input Power,CW,50 Ω,T=25ºC
Device Voltage,Vdd
3.0
5
5.25
+85
190
V
Tcase
-40
oC
oC
Tj (for>106 hours MTTF)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 ꢀ system.
Parameter
Operational Frequency Range
Conditions
Min
500
Typical
Max
4000
Units
MHz
MHz
dB
Test Frequency
1900
13.5
13
Gain
12
15
Input Return Loss
Output Return Loss
Output P1dB
dB
19
dB
+22.4
+38.5
1.0
dBm
dBm
dB
Output IP3
See Note 1.
+35
68
Noise Figure
+5
V
Supply Voltage, Vdd
Current, Idd
90
112
mA
54.5
oC/W
Thermal Resistance (jnc to case) θjc
Notes:
1. OIP3 is measured with two tones at an output power of 4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
Data Sheet: Rev C 05/26/11
- 2 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2011 TriQuint Semiconductor, Inc.