TQM8M9077
0.05-4 GHz Digital Variable Gain Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Vdd
Min Typ Max Units
Storage Temperature
RF Input Power, CW, 50ꢀ,T = 25ºC
Supply Voltage (Vdd)
Digital Input Voltage
-65 to 150 °C
+24 dBm
+6 V
4.75
-40
5
5.25
V
mA
°C
Idd
87
Operating Temp. Range
Tch (for >106 hours MTTF)
+85
190
Vdd+0.5 V
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: TLEAD=+25°C, Vdd=+5V (Configured as DSA followed by Amp)
Parameter
Conditions
Min
50
Typical
Max
4000
Units
MHz
MHz
dB
Operational Frequency Range
Test Frequency
Gain
2140
13
11
Gain Control Range
Gain Accuracy
Attenuation Step
Time rise / fall
31.5
dB
(0.3 + 4% of Atten. Setting) Max
dB
0.5
90
dB
10% / 90% RF
ns
Time on, Time off
Input Return Loss
Output Return Loss
Output P1dB
50% CTL to 10% / 90% RF
100
ns
-17
dB
-10.5
+21.5
dB
dBm
dBm
dB
Output IP3
See Note 1
+35.5
70
+38.5
3.9
Noise Figure
At max gain level
Supply Voltage
SupplyCurrent
+5
V
88
110
41
mA
°C/W
Thermal Resistance (Rth)
Channel to case
Notes:
1. OIP3 measured with two tones at an output power of +3 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using a 2:1 rule.
Datasheet: Rev D 01-20-12
Disclaimer: Subject to change without notice
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© 2012 TriQuint Semiconductor, Inc.
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