TGA4543
40.5 - 43.5 GHz Power Amplifier
Bond Pad Description
14
13
12
11
10
9
8
1
7
2
3
4
5
6
Bond Pad
Symbol
Description
1
RF In
Input, matched to 50 ohms
Gate voltage. ESD protection included; Bias network is required;
see Application Circuit on page 7 as an example.
Drain voltage. Bias network is required; must be biased from both
sides; see Application Circuit on page 7 as an example.
2, 14
Vg
Vd
3, 4, 5, 6, 10, 11,
12, 13
7
8
9
RF Out
Vdet
Output, matched to 50 ohms.
Detector diode output voltage. Varies with RF output power.
Reference diode output voltage.
Vref
Preliminary Data Sheet: Rev – 9/15/12
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Disclaimer: Subject to change without notice
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