T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30
Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Vd
Idq
Id_drive (Under RF
Drive)
Vg
Channel
Temperature, Tch
Rating
+40 V
-50 to 0 V
80 V
1.5 A
-25 to 25 mA
26 W
37 dBm
250
o
C
260
o
C
-40 to 150
o
C
Min
Typical
28
50
1400
-3.7
Max Units
30
V
mA
mA
V
200
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Absolute maximum ratings at 3 GHz.
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC,
Vd = 28 V, Idq = 50 mA, Vg = -3.7 V Typical
.
RF Characteristics
Symbol
Min
Typ
15.0
20.0
60
56
12.5
11.5
19.0
60
52
8.5
9.5
21.0
58
45
6.5
Max Units
dB
W
%
%
dB
dB
W
%
%
dB
dB
W
%
%
dB
10:1
Load Pull Performance at 3 GHz (V
DS
=28V, I
DQ
= 50mA, CW)
Linear Gain
G
LIN
Output Power at 3 dB Gain Compression
P
3dB
Drain Efficiency at 3 dB Gain Compression
DE
3dB
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
Gain at 3 dB Compression
G
3dB
Load Pull Performance at 6 GHz (V
DS
=28V, I
DQ
= 50mA, CW)
Linear Gain
G
LIN
Output Power at 3 dB Gain Compression
P
3dB
Drain Efficiency at 3 dB Gain Compression
DE
3dB
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
Gain at 3 dB Compression
G
3dB
Performance at 5.4 GHz in the 5-6 GHz Fixture (V
DS
=28V, I
DQ
= 50mA, Pulse:100µs 20%)
Linear Gain
G
LIN
9.0
Output Power at 3 dB Gain Compression
P
3dB
17.8
Drain Efficiency at 3 dB Gain Compression
DE
3dB
50
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
40
Gain at 3 dB Compression
G
3dB
6.0
Narrowband Performance at 3.5 GHz (
V
DS
=28V, I
DQ
= 50mA
, CW at P1dB, applied for 3.5 secs)
Impedance Mismatch Ruggedness
VSWR
Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
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2 of 15-
Disclaimer: Subject to change without notice
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