T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Applications
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General Purpose RF Power
Jammers
Military and Civilian Radar
Professional and Military radio systems
Wideband amplifiers
Test instrumentation
Avionics
Product Features
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Frequency: DC to 6 GHz
Output Power (P3dB): 18 W at 6 GHz
Linear Gain: >10 dB at 6 GHz
Operating Voltage: 28 V
Low thermal resistance package
Functional Block Diagram
1
2
General Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB)
discrete GaN on SiC HEMT which operates from DC
to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25
μm
process, which features advanced field plate
techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Part No.
T1G6001528-Q3
T1G6001528-Q3 EVB1
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
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1 of 15-
ECCN
EAR99
EAR99
Description
Packaged Transistor
5-6 GHz Eval Board
Disclaimer: Subject to change without notice
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