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AH225-S8G 参数 Datasheet PDF下载

AH225-S8G图片预览
型号: AH225-S8G
PDF下载: 下载PDF文件 查看货源
内容描述: [1W High Linearity InGaP HBT Amplifier]
分类和应用:
文件页数/大小: 21 页 / 1577 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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AH225  
1W High Linearity InGaP HBT Amplifier  
Mechanical Information  
Package Information and Dimensions  
This package is lead-free/RoHS-compliant. The plating  
material on the leads is NiPdAu. It is compatible with  
°
both lead-free (maximum 260 C reflow temperature)  
and lead (maximum 245 °C reflow temperature)  
soldering processes.  
The AH225 will be marked with an “AH225G”  
designator with a lot code marked below the part  
designator. The “Y” represents the last digit of the year  
the part was manufactured, the “XXXX” is an auto-  
generated number, and “Z” refers to a wafer number in a  
lot batch.  
Mounting Configuration  
Notes:  
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device  
can occur without the use of one.  
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and  
have a final plated thru diameter of .25 mm (.010”) or equivalent.  
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.  
4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat  
sink.  
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink.  
6. RF Trace width depends upon the PC board material and construction.  
7. Use 1 oz. Copper minimum.  
8. All dimensions are in millimeters (inches). Angles are in degrees.  
Data Sheet: Rev F 05/17/12  
Disclaimer: Subject to change without notice  
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© 2012 TriQuint Semiconductor, Inc.  
Connecting the Digital World to the Global Network®  
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