AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.0
Ð
>
W
A
V
EL
E
N
GTH
S
TOW
A
RD
0.0
0.49
0.48
±
180
170
U
CT
0.6
Z
0
= 10
Ω
IN
D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.6
1.8
1.4
2.0
3.0
4.0
5.0
10
20
D
L
OA
D
<
OW
A
R
7
HST
0.4
N
GT
-170
EL
E
V
WA
<Ð
-90
-160
0.2
0.49
0.1
0.4
0.48
)
/
Yo
(-jB
CE
-85
N
TA
EP
SC
1.
0
4
0.0
50
-1
-80
U
ES
V
TI
UC
0.4
0.3
6
IN
D
,O
o)
5
-70
06
0.
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f)
2500 (f1)
2535 (f2)
2595 (f3)
2655 (f4)
2700 (f5)
Z
S
Ω
(complex
source impedance)
18.0 – j14.9
15.7 – j15.8
12.0 – j16.0
9.0 – j15.3
7.5 – j14.6
GATE (2, 3)
Z
S
Z
L
Ω
(complex
optimum load impedance)
2.5 – j3.7
2.3 – j3.5
2.1 – j3.2
1.9 – j2.9
1.7 – j2.7
DRAIN (6, 7)
Z
L
SOURCE (9)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
18
0.
0
-5
-25
44
0
-65
.5
0.
0.3
0.1
3
7
-30
-60
1.8
0
2.
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
0.0
0.4
9
1
NC
EC
OM
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
-1
0.
0.4
40
4
Z
X/
-20
5
0.0
3.
0
f5
-75
R
5.0
0.2
-15
4.0
1.
0
f1
0.8
Z
S
-10
f5
Z
L
0.6
0.
8
10
f1
50
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
0.
8
0.6
0.4
10
0.1
-1
20
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
RE
L
E
OF
ES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
19
0.
31
0.
07
30
0.
43
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
