AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
200
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
400
µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 1300 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
C
RSS
—
3.0
—
pF
Symbol
Min
Typ
Max
Un i t
Off Characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
M in
65
—
—
—
—
—
—
Typ
—
—
—
9
—
3.8
0.08
Max
—
4
200
12
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
On Characteristics
V
GS(TH)
V
GS(Q)
V
DS(ON)
(in
Agere Systems Supplied Test Fixture)
Functional Tests (in
Supplied Test Fixture)
Drain Efficiency*
G
PS
η
IM3
ACPR
IRL
—
—
—
—
Input Return Loss*
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2600.0 MHz, 6 µs pulse at 10% duty)
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
—
11.5
–38
–41
–15
20
—
—
—
—
dB
dBc
dBc
dB
W
%
P
1dB
ψ
—
125
—
—
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 125 W (CW), I
DQ
= 1300 mA, f
C
= 2600.0 MHz
VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V
DD
= 28 Vdc, I
DQ
= 1300 mA, and
P
OUT
= 20 W avg.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
