欢迎访问ic37.com |
会员登录 免费注册
发布采购

AGR09085E 参数 Datasheet PDF下载

AGR09085E图片预览
型号: AGR09085E
PDF下载: 下载PDF文件 查看货源
内容描述: 85 W, 865兆赫, 895兆赫, N沟道电子模式,横向MOSFET [85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET]
分类和应用: 电子
文件页数/大小: 8 页 / 330 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
 浏览型号AGR09085E的Datasheet PDF文件第1页浏览型号AGR09085E的Datasheet PDF文件第2页浏览型号AGR09085E的Datasheet PDF文件第3页浏览型号AGR09085E的Datasheet PDF文件第4页浏览型号AGR09085E的Datasheet PDF文件第6页浏览型号AGR09085E的Datasheet PDF文件第7页浏览型号AGR09085E的Datasheet PDF文件第8页  
AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
0
-10
-20
ACPR (dBc)
S
-30
ACP+
-40
-50
-60
-70
0.00
ALT1+
ALT-
5.00
10.00
15.00
20.00
25.00
30.00
35.00
ACP-
P
OUT
(W)S
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.8 A, T
C
= 30 °C.
FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13; OFFSET 1 = 750 kHz;
OFFSET 2 = 1.98 MHz; OFFSET 1 AND 2 BW = 30 kHz.
Figure 4. ACPR vs. P
OUT
19
18
0
POWER GAIN (dB)
a
17
16
15
14
13
12
11
10
860
POWER GAIN
P
OUT
= 100 W
P
OUT
= 10 W
-4
-6
-8
RETURN LOSS
-10
-12
-14
-16
865
870
875
880
885
890
895
-18
900
FREQUENCY (MHz)A
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.8 A, T
C
= 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
INPUT RETURN LOSS (dB)
-2