AGR 09085 E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.11
0.12
0.38
0.13
0.37
0.14
0.36
0.1
0.39
0.9
1.0
0.6
60
0.4
0
12
07
0.
5
65
0.
43
0.
0
13
70
0.0
5
0.4
5
75
EN
T
(+
j
X/
Z
,O
o)
R
IT
AC
AP
C
0.
IV
0.
44
06
TA
EP
SC
SU
E
E
(+
NC
0.7
2
Yo)
jB/
0.2
14
0.4
0
0. 0
4
6
15
0
CE
CO
M
0.4
PO
N
0.6
0.0
Ð
>
W
A
V
EL
E
N
GTH
S
TOW
A
RD
0.0
0.49
GEN
ERA
0.48
±
180
TO
170
RÐ
0.4
>
7
160
90
80
0.8
RE
AC
TA
N
1.
0
85
U
CT
IVE
IN
D
0.1
0.9
1.0
1.2
0.2
0.5
0.6
0.7
0.8
1.4
1.8
0.3
0.4
Z
0
= 5
Ω
L
OA
D
<
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
D
OW
A
R
HST
70
N
GT
-1
E
V
EL
WA
160
-90
-
0.1
f1
o)
jB/
Y
E
(-
NC
0.4
0.48
-85
f3
Z
S
0.6
0.
8
1.
0
0.2
MHz (f)
865 (f1)
880 (f2)
895 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance)
(Complex
Optimum Load Impedance)
0.35 – j0.73
1.66 + j1.22
0.35 – j0.77
1.67 + j1.18
0.33 – j0.82
1.69 + j1.14
GATE (2)
Z
S
DRAIN (1)
Z
L
SOURCE (3)
INPUT MATCH
TA
7
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
1.6
Agere Systems Inc.
2.0
0.4
f3
0.6
Z
L
0.
8
f1
0
1.
1.4
0.2
0.0
0.8
8
1.2
55
9
0.0
1
0.4
0.4
110
100
50
90
0.15
0.35
80
40
45
70
35
0.
4
0.3
0.2
0.1
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
