MP6901
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
= −100 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
V
―
―
―
―
―
―
―
―
―
―
―
40
60
−20
−20
−2.5
―
µA
µA
mA
V
CBO
CEO
CB
CE
EB
E
Collector cut-off current
= −80 V, I = 0 A
B
Emitter cut-off current
I
= −5 V, I = 0 A
−0.5
−100
−80
2000
1000
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
V
I
I
= −1 mA, I = 0 A
E
(BR) CBO
(BR) CEO
C
C
= −10 mA, I = 0 A
―
V
B
h
h
V
V
= −2 V, I = −1 A
―
FE (1)
CE
CE
C
DC current gain
―
= −2 V, I = −3 A
―
FE (2)
C
Collector-emitter
Saturation voltage
V
I
I
= −3 A, I = −6 mA
−1.5
−2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= −3 A, I = −6 mA
―
B
Transition frequency
f
V
V
= −2 V, I = −0.5 A
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.15
0.80
0.40
―
―
―
on
Output
I
I
B2
B1
Input
20 µs
Switching time
µs
Storage time
Fall time
t
stg
V
= −30 V
CC
t
f
−I = I = 6 mA, duty cycle ≤ 1%
B1
B2
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Forward current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
―
―
―
―
―
―
―
―
―
1.0
8
4
6
A
A
FM
Surge current
I
t = 1 s, 1 shot
FSM
Forward voltage
V
I
= 1 A, I = 0 A
2.0
―
―
V
F
F
B
Reverse recovery time
Reverse recovery charge
t
µs
µC
rr
I
= 4 A, V = 3 V, dI /dt = −50 A/µs
F
BE
F
Q
rr
3
2002-11-20
TOSHIBA [ TOSHIBA ]
