XP161A01A8PR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
1000
1000
SWITCHING TIME vs. DRAIN CURRENT
Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1%
Ciss
Switching Time:t (ns)
tf
100
td
（off）
Capacitance:C (pF)
100
Coss
10
td
（on） tr
,
Crss
10
0
10
20
30
1
0.1
1
10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
10
Vds=10V, Id=3A
9
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Gate-Source Voltage:Vgs (V)
8
Reverse Drain Current:Id (A)
6
6
Vgs＝4.5V
4
3
0,-4.5A
2
0
0
2
4
6
8
0
0
0.2
0.4
0.6
0.8
1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal Resistance:γs(t)
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)
10
11
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
853
TOREX [ TOREX SEMICONDUCTOR ]
