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XP161A01A8PR 参数 Datasheet PDF下载

XP161A01A8PR图片预览
型号: XP161A01A8PR
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOS FET [N-Channel Power MOS FET]
分类和应用:
文件页数/大小: 4 页 / 154 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
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Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.18Ω (max)
NUltra
High-Speed Switching
NSOT-89
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP161A01A8PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.11Ω(Vgs=10V)
: Rds(on)=0.18Ω(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage
: 4.5V
High density mounting
: SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
1
2
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
1
2
3
3
SOT-89
(TOP VIEW)
11
■Equivalent Circuit
■Absolute Maximum Ratings
Ta=25˚C
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
±20
3
9
3
2
150
-55~150
UNITS
V
V
A
A
A
W
˚C
˚C
1
2
N-Channel MOS FET
(1 device built-in)
3
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a ceramic PCB
850