XP161A01A8PR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
9.0
10V
5V
Pulse Test, Ta=25:
9
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V
Drain Current:Id (A)
Drain Current:Id (A)
4.5V
6.0
4V
6
3.5V
3.0
3V
Vgs＝2.5V
0.0
0
1
2
3
4
5
Topr=25℃
3
125℃
0
0
1
2
-55℃
3
4
5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.4
Pulse Test, Ta=25:
1
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.3
Id＝1.5A
3A
Drain-Source On-State Resistance
:Rds (on) (Ω)
Vgs＝4.5V
0.1
10V
0.2
0.1
0
0
2
4
6
8
10
0.01
0
2
4
6
8
10
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
11
Drain-Source On-State Resistance
:Rds (on) (Ω)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.4
Pulse Test
1
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds＝10V , Id＝1mA
0.3
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
150
0.5
0.2
Vgs＝4.5V
0.1
Id＝3A
1.5A
0
-0.5
1.5A,3A
10V
0
-60
-30
0
30
60
90
120
-1
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (:)
Ambient Temp.:Topr (:)
852
TOREX [ TOREX SEMICONDUCTOR ]
