XP151A11B0MR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
4
3.5
10V
5V, 4.5V
4V
3.5V
3V
Ta=25℃, Pulse Test
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
4
3.5
3
Vds=10V, Pulse Test
Drain Current:Id (A)
3
2.5
2
1.5
1
0.5
0
0
Drain Current:Id (A)
2.5
2
1.5
25℃
Vgs=2.5V
1
Ta=125℃
0.5
0
1
2
3
4
5
0
1
2
-55℃
3
4
5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.4
Ta=25℃, Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
Ta=25℃, Pulse Test
Drain-Source On-State Resistance
:Rds(on) (Ω)
0.35
0.3
0.25
Id=1A
Drain-Source On-State Resistance
:Rds(on) (Ω)
Vgs=4.5V
0.2
0.5A
0.1
10V
0.15
0.1
0.05
0
0
2
4
6
8
10
0.01
0
1
2
3
4
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
11
Drain-Source On-State Resistance
:Rds(on) (Ω)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
0.3
0.25
0.2
0.15
0.1
0.05
0
-50
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
0.6
Vds=10V, Id=1mA
Gate-Source Cut-Off Voltage Variance
:Vgs(off) Variance (V)
150
0.4
0.2
0
-0.2
-0.4
-0.6
-50
0
50
100
150
Id=1A
0.5A
Vgs=4.5V
0.5A, 1A
10V
0
50
100
Ambient Temp.:Topr (℃)
Ambient Temp.:Topr (℃)
804
TOREX [ TOREX SEMICONDUCTOR ]
