XP151A11B0MR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = 30V , Vgs = 0V
Vgs =
±
20V , Vds = 0V
Id = 1mA , Vds = 10V
Id = 0.5A , Vgs = 10V
Id = 0.5A , Vgs = 4.5V
Id = 0.5A , Vds = 10V
If = 1A , Vgs = 0V
1.0
0.09
0.13
2.4
0.8
1.1
MIN
TYP
MAX
10
±
10
Ta=25°C
UNITS
µA
µA
V
Ω
Ω
S
V
3.0
0.12
0.17
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = 10V , Vgs = 0V
f = 1 MHz
MIN
TYP
150
90
30
MAX
Ta=25°C
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
Vgs = 5V , Id = 0.5A
Vdd = 10V
CONDITIONS
MIN
TYP
10
15
25
45
MAX
Ta=25°C
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
Rth ( ch-a )
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP
250
MAX
UNITS
°C
/ W
11
803
TOREX [ TOREX SEMICONDUCTOR ]
