Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance : 0.17Ω (max)
NUltra
High-Speed Switching
NGate
Protect Diode Built-in
NSOT-23
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP151A11B0MR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds (on) = 0.12Ω ( Vgs = 10V )
: Rds (on) = 0.17Ω ( Vgs = 4.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage
: 4.5V
High density mounting
: SOT-23
■Pin Configuration
Ｄ
３
■Pin Assignment
PIN NUMBER
PIN NAME
Ｇ
Ｓ
Ｄ
FUNCTION
1
2
1
Ｇ
２
Ｓ
Gate
Source
Drain
3
SOT-23
（TOP VIEW）
11
■Equivalent Circuit
３
■Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Tch
Tstg
150
-55 ~ 150
O
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
RATINGS
30
+ 20
1
4
1
0.5
UNITS
V
V
A
A
A
W
C
C
1
２
N-Channel MOS FET
(1 device built-in)
Storage Temperature
O
( note ) : When implemented on a ceramic PCB
802
TOREX [ TOREX SEMICONDUCTOR ]
