■
XP151A03A7MR Characteristics
Drain/Source Voltage vs. Capacitance
10000
Vgs=0V, f=1MHz
1000
Switching Time vs. Drain Current
Vgs=5V, Vdd≒10V, PW=10µsec. duty≦1%
Capacitance:Ciss, Coss, Crss (pF)
tf
Switching Time:t (ns)
1000
Ciss
100
td
（off）
td
（on）
10
tr
100
Coss
Crss
10
0
10
20
1
0.1
1
10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
5
Vds=10V, Id=0.8A
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
2.5
Vgs＝4.5V
Gate/Source Voltage:Vgs (V)
Reverse Drain Current:Id (A)
4
2
2.5V
1.5
1.5V
1.0
0,-4.5V
0.5
u
3
2
1
0
0
2
4
6
8
0.0
0
0.2
0.4
0.6
0.8
1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
453
TOREX [ TOREX SEMICONDUCTOR ]
