XP151A03A7MR
■
XP151A03A7MR Characteristics
Drain Current vs. Drain /Source Voltage
2.5
Power MOS FET
Drain Current vs. Gate/Source Voltage
2.5
Pulse Test, Vds=10V
Pulse Test, Ta=25:
4V,4.5V,5V
3.5V
3A
2.5V
2V
2.0
1.5V
2.0
Drain Current:Id (A)
1.5
Drain Current:Id (A)
1.5
1.0
1.0
Topr＝25 ℃
0.5
0.5
Vgs＝1V
0.0
0
1
2
3
125 ℃
0.0
0
1
-55 ℃
2
3
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
0.5
Pulse Test, Ta=25:
Drain/Source On-State Resistance vs. Drain Current
1
Pulse Test, Ta=25:
Drain /Source On-State Resistance
:Rds (on) (Ω)
u
0.4
0.3
Id＝0.4A
0.2
0.8A
Drain/Source On-State Resistance
:Rds (on) (Ω)
Vgs＝1.5V
2.5V
4.5V
0.1
0.1
0
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
2.5
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
0.8
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
0.6
Vds=10V, Id=1mA
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.4
0.2
0
-0.2
0.6
Id＝0.8A
0.4A
Vgs＝1.5V
2.5V
0.2
0.4A,0.8A
4.5V
0
-60
-30
0
30
60
90
120
150
0.4A,0.8A
0.4
-0.4
-0.6
-60
-30
0
30
60
90
120
150
Ambient Temperature:Topr (:)
Ambient Temperature:Topr (:)
452
TOREX [ TOREX SEMICONDUCTOR ]
