s
Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Ta=25:
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=0.4A, Vgs=4.5V
Id=0.4A, Vgs=2.5V
Id=0.4A, Vgs=1.5V
Yfs
Vf
Id=0.4A, Vds=10V
If=0.8A, Vgs=0V
MIN
TYP
MAX
10
±10
0.5
0.13
0.18
0.3
3.5
0.8
1.1
0.17
0.24
0.5
UNITS
µA
µA
V
Ω
Ω
Ω
S
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN
TYP
220
100
30
MAX
Ta=25:
UNITS
pF
pF
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=5V, Id=0.4A
Vdd=10V
CONDITIONS
MIN
TYP
10
15
45
60
MAX
Ta=25:
UNITS
ns
ns
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
250
MAX
UNITS
:/W
451
TOREX [ TOREX SEMICONDUCTOR ]
