XC61F
Seires
■Block Diagram
(1)CMOS output
■Absolute
■絶対最大定格
PARAMETER
Input Voltage
Output Current
Output Voltage
CMOS
Maximum Ratings
SYMBOL
V
IN
I
OUT
V
OUT
RATINGS
12
50
V
SS
-0.3
∼
V
IN
+0.3
V
SS
-0.3
∼
9
150
Pd
Ta=25℃
UNITS
V
mA
V
V
IN
N-ch open drain
SOT-23
V
OUT
Delay Circuit
Vref
Continuous Total
Power Dissipation
SOT-89
TO-92
500
300
-30
∼
+80
-40
∼
+125
mW
C
C
2
Operating Ambient Temperature
Topr
Tstg
O
V
SS
(2)N-channel open drain output
V
IN
Storage Temperature
O
V
OUT
Delay Circuit
Vref
V
SS
■Electrical Characteristics
Ta＝25℃
PARAMETER
Detect Voltage
Hysteresis Range
SYMBOL
V
DF
V
HYS
CONDITIONS
MIN
V
DF
(T)
x 0.98
TYP
V
DF
(T)
V
DF
x 0.05
MAX
V
DF
(T)
x 1.02
UNITS
V
V
CIRCUIT
1
1
V
DF
x 0.02
V
DF
x 0.08
Supply Current
I
SS
Operating Voltage
V
IN
N-ch
Output Current
I
OUT
P-ch
V
IN
=1.5V
=2.0V
=3.0V
=4.0V
=5.0V
V
DF
=1.6V to 6.0V
V
DS
=0.5V
V
IN
=1.0V
=2.0V
=3.0V
=4.0V
=5.0V
V
DS
=2.1V
V
IN
=8.0V
( CMOS output )
0.9
1.0
1.3
1.6
2.0
0.7
2.2
7.7
10.1
11.5
13.0
-10.0
±
100
2.6
3.0
3.4
3.8
4.2
10.0
µA
2
V
1
3
mA
4
ppm/°C
200
ms
-
5
Detect Voltage
Temperature Characteristics
Transient Delay Time
(V
DR
V
OUT
inversion)
∆
V
DF
∆
Topr
•
V
DF
tDLY *
V
IN
changes from
0.6V to 10V
50
V
DF
(T)：established detect voltage value
Release Voltage : V
DR
= V
DF
+ V
HYS
* Transient Delay Time : 1ms to 50ms & 80ms to 400ms versions are also available.
Note : The power consumption during power-start to output being stable (release operation) is 2
µA
greater than it is after that period
(completion of release operation) because of delay circuit through current.
162
TOREX [ TOREX SEMICONDUCTOR ]
