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T436416A-8S 参数 Datasheet PDF下载

T436416A-8S图片预览
型号: T436416A-8S
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
T436416A  
Self Refresh Entry & Exit Cycle  
0
1
2
3
4
5
6
7
8
9
1 0  
1 1  
1 2  
1 3  
1 4  
1 5  
1 6  
1 7  
1 8  
1 9  
S S  
C L O C K  
C K E  
C S  
S S  
S S  
* N o te 2  
* N o te 4  
tR  
C
m
in  
* N o te 1  
* N o te 6  
S S  
* N o te 3  
S S  
tS S  
S S  
S S  
S S  
* N o te 5  
S S  
S S  
S S  
S S  
R A S  
C A S  
A D D R  
B A  
* N o te 7  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
S S  
A 1 0 /A P  
H i- z  
H i- z  
S S  
S S  
D Q  
S S  
S S  
S S  
S S  
W E  
S S  
S S  
S S  
S S  
D Q M  
S e lf R e f r e s h E n tr y  
S e lf R e f r e s h E x it  
A u t o R e f r e s h  
: D o n 't c a r e  
*Note : TO ENTER SELF REFRESH MODE  
1. CS , RAS & CAS with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs inculding the system clock can be don’t care except for CKE.  
3. The device remains in self refresh mode as long as CKE stays ‘Low’.  
Cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.  
TO EXIT SELF REFRESH MODE  
4. System clock restart and be stable before returning CKE high.  
5. CS starts from high.  
6. Minimum tRC is required after CKE going high to complete self refresh exit.  
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the  
system uses burst refresh.  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P.27  
Publication Date: MAY. 2003  
Revision: B  
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