TE
tmCH
Preliminary T14L1024A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power Supply Voltage
Input Voltage
SYM
Vcc
VIN
RATING
-0.5 to 4.6
-0.5 to Vcc+0.5
-0.5 to Vcc+0.5
0 to +70
UNIT
V
V
VOUT
TOPR
TSTG
PD
Output Voltage
V
Operating Temperatrue
Storage Temperature
Power Dissipation
°C
°C
W
-55 to +150
1.0
IOUT
Short Circuit Output Current
50
mA
TRUTH TABLE
CE2
X
MODE
I/O0- I/O7
High-Z
Vcc
ISB, ISB1
CE1
H
OE
X
WE
X
Not Selected
Not Selected
Output Disable
Read
ISB, ISB1
X
L
X
X
High-Z
L
H
H
H
High-Z
Icc
Icc
Icc
L
H
L
H
Data Out
Data In
L
H
X
L
Write
OPERATING CHARACTERISTICS
(Vcc = 3.3V ±0.3V, Ta = 0 to 70°C)
PARAMETER
Power Supply Voltage
Input Low Voltage
SYM.
Vcc
VIL
TEST CONDITIONS
MIN.
MAX.
UNIT
V
3.0
-0.5
2.1
-
3.6
0.8
V
VIH
ILI
Input High Voltage
Input Leakage Current
Vcc+0.3
5
V
VIN =Vss to Vcc
uA
VIN=Vss to Vcc , CE1 = VIH or CE2
= VIL or OE = VIH or WE = VIL
ILO
Output Leakage Current
-
5
uA
VOL
VOH
Icc
I
I
OL = 4.0 mA
OH =-2.0 mA
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
-
2.4
-
0.4
-
V
V
CE1 =V
CE2 = VIH ;f=max
IO = 0mA
10ns
12ns
15ns
110
105
100
25
mA
mA
mA
mA
mA
IL
-
-
ISB
Standby Power
Supply Current
CE1 =V , CE2 = VIL, IO = 0mA
-
IH
ISB1
Vcc = max; CE1 > Vcc-0.2V or CE2<
Vss+0.2V; f=0mhz; IO = 0mA
-
5
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
TM Technology, Inc. reserves the right
to change products or specifications without notice.
P. 2
Publication Date: SEP. 2002
Revision:0.F
TMT [ TAIWAN MEMORY TECHNOLOGY ]
