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T14L1024A-10J 参数 Datasheet PDF下载

T14L1024A-10J图片预览
型号: T14L1024A-10J
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM [128K X 8 HIGH SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 87 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
Preliminary T14L1024A  
Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the  
outputs should not be applied.  
2. The data output from DOUT are the same as the data written to DIN during the write cycle.  
3. DOUT provides the read data for the next address.  
4. Transition is measured ± 500 mV from steady state with CL = 5pF. This parameter is  
guaranteed but not 100% tested.  
5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of  
t
or (t  
+ t ) to allow the I/O drivers to turn off and data to be placed on the bus for the  
WHZ DW  
WP  
required t If OE is high during a WE controlled write cycle, this requirement does  
.
DW  
not apply and the write pulse can be as short as the specified t  
.
WP  
TM Technology, Inc. reserves the right  
to change products or specifications without notice.  
P. 7  
Publication Date: SEP. 2002  
Revision:0.F  
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