欢迎访问ic37.com |
会员登录 免费注册
发布采购

TPS54386PWPR 参数 Datasheet PDF下载

TPS54386PWPR图片预览
型号: TPS54386PWPR
PDF下载: 下载PDF文件 查看货源
内容描述: 3 -A双路非同步转换器,集成高边MOSFET [3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET]
分类和应用: 转换器稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
文件页数/大小: 52 页 / 1214 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号TPS54386PWPR的Datasheet PDF文件第25页浏览型号TPS54386PWPR的Datasheet PDF文件第26页浏览型号TPS54386PWPR的Datasheet PDF文件第27页浏览型号TPS54386PWPR的Datasheet PDF文件第28页浏览型号TPS54386PWPR的Datasheet PDF文件第30页浏览型号TPS54386PWPR的Datasheet PDF文件第31页浏览型号TPS54386PWPR的Datasheet PDF文件第32页浏览型号TPS54386PWPR的Datasheet PDF文件第33页  
TPS54383, TPS54386  
www.ti.com  
SLUS774BAUGUST 2007REVISED OCTOBER 2007  
2
)
æ
ç
ö
÷
æ
ç
ç
è
ö
÷
÷
ø
DI  
(
2
)
OUTPUTx  
I
=
D ´  
I
(
+
RMS(outputx)  
OUTPUTx  
ç
ç
è
÷
÷
ø
12  
(16)  
where  
D is the duty cycle  
IOUTPUTx is the dc output current  
ΔIOUTPUTx is the peak ripple current in the inductor for Outputx  
Notice the impact of the operating duty cycle on the result.  
Multiplying the result by the RDS(on) of the MOSFET gives the conduction loss.  
2
P
= I  
´R  
DS(on)  
D(cond)  
RMS(outputx)  
(17)  
(18)  
The switching loss is approximated by:  
2
(VIN) ´ CJ ´ fS  
PD(SW)  
=
2
where  
where CJ is the prallel capacitance of the rectifier diode and snubber (if any)  
fS is the switching frequency  
The total power dissipation is found by summing the power loss for both MOSFETs plus the loss in the internal  
regulator.  
P = P  
+ P  
+ P  
+ P  
+ V ´Iq  
D
D(cond)output1  
D(SW)output1  
D(cond)output2  
D(SW)output2 IN  
(19)  
The temperature rise of the device junction depends on the thermal impedance from junction to the mounting pad  
(See the Package Dissipation Ratings table), plus the thermal impedance from the thermal pad to ambient. The  
thermal impedance from the thermal pad to ambient depends on the PCB layout (PowerPAD interface to the  
PCB, the exposed pad area) and airflow (if any). See the PCB Layout Guidelines, Additional References section.  
The operating junction temperature is shown in Equation 20.  
T = T + P ´ q + qTH(pad-amb)  
TH(pkg)  
(
)
J
A
D
(20)  
Power Derating  
The TPS5438x delivers full current at ambient temperatures up to +85°C if the thermal impedance from the  
thermal pad maintains the junction temperature below the thermal shutdown level. At higher ambient  
temperatures, the device power dissipation must be reduced to maintain the junction temperature at or below the  
thermal shutdown level. Figure 36 illustrates the power derating for elevated ambient temperature under various  
airflow conditions. Note that these curves assume that the PowerPAD is properly soldered to the recommended  
thermal pad. (See the References section for further information.)  
Copyright © 2007, Texas Instruments Incorporated  
Submit Documentation Feedback  
29  
Product Folder Link(s): TPS54383 TPS54386  
 
 复制成功!