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TPS5430QDDARQ1 参数 Datasheet PDF下载

TPS5430QDDARQ1图片预览
型号: TPS5430QDDARQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 3 -A宽输入范围降压SWIFT转换器 [3-A WIDE-INPUT-RANGE STEP-DOWN SWIFT CONVERTER]
分类和应用: 转换器输入元件
文件页数/大小: 27 页 / 982 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SLVS751C – NOVEMBER 2007 – REVISED JULY 2009
Sometimes under serious overload conditions such as short-circuit, the overcurrent runaway may still happen
when using cycle-by-cycle current limiting. A second mode of current limiting is used, i.e., hiccup mode
overcurrent limiting. During hiccup mode overcurrent limiting, the voltage reference is grounded and the high-side
MOSFET is turned off for the hiccup time. Once the hiccup time duration is complete, the regulator restarts under
control of the slow-start circuit.
Overvoltage Protection (OVP)
The TPS5430 has an OVP circuit to minimize voltage overshoot when recovering from output fault conditions.
The OVP circuit includes an overvoltage comparator to compare the VSENSE pin voltage and a threshold of
112.5% × VREF. Once VSENSE voltage is higher than the threshold, the high-side MOSFET is forced off. When
VSENSE voltage drops lower than the threshold, the high-side MOSFET is enabled again.
Thermal Shutdown
The TPS5430 protects itself from overheating with an internal thermal shutdown circuit. If the junction
temperature exceeds the thermal shutdown trip point, the voltage reference is grounded and the high-side
MOSFET is turned off. The part is restarted under control of the slow-start circuit automatically when the junction
temperature drops 14°C below the thermal shutdown trip point.
PCB Layout
Connect a low-ESR ceramic bypass capacitor to the VIN pin. Care should be taken to minimize the loop area
formed by the bypass capacitor connections, the VIN pin, and the ground pin. The best way to do this is to
extend the top side ground area from under the device adjacent to the VIN trace, and place the bypass capacitor
as close as possible to the VIN pin. The minimum recommended bypass capacitance is 4.7-µF ceramic with a
X5R or X7R dielectric.
There should be a ground area on the top layer directly underneath the IC, with an exposed area for connection
to the thermal pad. Use vias to connect this ground area to any internal ground planes. Use additional vias at the
ground side of the input and output filter capacitors as well. The GND pin should be tied to the PCB ground by
connecting it to the ground area under the device as shown in
The PH pin should be routed to the output inductor, catch diode and boot capacitor. Since the PH connection is
the switching node, the inductor should be located very close to PH and the area of the PCB conductor
minimized to prevent excessive capacitive coupling. The catch diode should also be placed close to the device to
minimize the output current loop area. Connect the boot capacitor between the phase node and the BOOT pin as
shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. The component
placements and connections shown work well, but other connection routings may also be effective.
Connect the output filter capacitor(s) as shown between the VOUT trace and GND. It is important to keep the
loop formed by PH, L
OUT
, C
OUT
, and GND as small as is practical.
Connect the VOUT trace to the VSENSE pin using the resistor divider network to set the output voltage. Do not
route this trace too close to the PH trace. Due to the size of the IC package and the device pin-out, the trace
may need to be routed under the output capacitor. Alternately, the routing may be done on an alternate layer if a
trace under the output capacitor is not desired.
If using the grounding scheme shown in
use a via connection to a different layer to route to the ENA
pin.
Copyright © 2007–2009, Texas Instruments Incorporated
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