TPS40190
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SLUS658A–JULY 2005–REVISED AUGUST 2005
ELECTRICAL CHARACTERISTICS
TA = –40°C to 85°C, VVDD= 12 Vdc, TA =TJ, all parameters at zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
REFERENCE
0°C ≤ TJ≤ 85°C
585
582
591
591
597
mV
597
VFB Feedback voltage range
-40°C ≤ TJ≤ 85°C
INPUT SUPPLY
VVDD Input voltage range
4.5
15.0
2.5
20
V
VENABLE = 2.5 V, Outputs switching
VENABLE = 0.6 V
mA
µA
IVDD
Operating current
ON BOARD REGULATOR
V5VBP
VDO
ISC
Output voltage
VVDD > 6 V, I5VBP≤ 10 mA
5.1
40
5.3
5.5
V
Regulator dropout voltage
Regulator current limit threshold
Average current(1)
VVDD - VBP5 , VVDD = 5 V, IBP5≤ 25 mA
270
400
mV
mA
IBP5
40
OSCILLATOR
fSW
Switching frequency
240
300
0.75
0.5
360 kHz
V
VRMP
VVALLEY
PWM
DMAX
tON(min)
Ramp amplitude(2)
Valley voltage(2)
Maximum duty cycle(2)
Minimum controlled pulse(2)
85%
130
ns
HDRV off to LDRV on
LDRV off to HDRV on
50
25
tDEAD
Output driver dead time
SOFT-START
tSS
Soft-start time
Soft-start delay time(3)
3.0
4.7
6
7.0
ms
tSSDLY
tREG
Time to regulation
10.5
ERROR AMPLIFIER
GBWP
AOL
Gain bandwidth product(2)
DC gain(2)
5
60
100
1
MHz
dB
IIB
Input bias current (current out of FB pin)
Output source current
Output sink current
0
nA
IEAOP
IEAOM
VFB = 0 V
VFB = 2 V
mA
1
SHORT CIRCUIT PROTECTION
tPSS(min)
Minimum pulse during short circuit(2)
tBLNK
250
180
ns
Blanking time(2)
100
25
140
95
tOFF
Off-time between restart attempts
ms
RCOMP(GND) = OPEN, TJ = 25°C
RCOMP(GND) = 4 kΩ, TJ = 25°C
RCOMP(GND) = 12 kΩ, TJ = 25°C
256
128
368
320
160
460
384
192
552
VILIM
Short circuit comparator threshold voltage
mV
(1) 40 mA is the current available for MOSFET gate drive, the device itself and any external loads. The sum of these must not exceed
40 mA.
(2) Ensured by design. Not production tested.
(3) The delay time is the time delay from application of power to the device or from assertion of ENABLE until the output begins to rise.
3
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