TPS2041B-Q1
TPS2042B-Q1
TPS2051B-Q1
SLVS782A –NOVEMBER 2007–REVISED JUNE 2010
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ELECTRICAL CHARACTERISTICS
over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 0.5 A, VI(ENx) = 0 V (unless otherwise noted)
PARAMETER
Power Switch
TEST CONDITIONS(1)
MIN TYP MAX UNIT
Static drain-source on-state
resistance, 5-V or 3.3-V
operation
VI(IN) = 5 V or 3.3 V, IO = 0.5 A
–40°C ≤ TJ ≤ 125°C
–40°C ≤ TJ ≤ 125°C
70 135
rDS(on)
mΩ
Static drain-source on-state
resistance, 2.7-V operation(2)
VI(IN) = 2.7 V, IO = 0.5 A
75 150
VI(IN) = 5.5 V
VI(IN) = 2.7 V
VI(IN) = 5.5 V
VI(IN) = 2.7 V
0.6
0.4
1.5
1
tr
tf
Rise time, output(2)
Fall time, output(2)
CL = 1 mF,
RL = 10 Ω
TJ = 25°C
ms
0.05
0.05
0.5
0.5
Enable Input (EN, ENx )
VIH
VIL
II
High-level input voltage
2.7 V ≤ VI(IN) ≤ 5.5 V
2.7 V ≤ VI(IN) ≤ 5.5 V
VI( ENx ) = 0 V or 5.5 V
CL = 100 mF, RL = 10 Ω
CL = 100 mF, RL = 10 Ω
2
V
V
Low-level input voltage
Input current
Turn-on time(2)
Turn-off time(2)
0.8
–0.5
0.5 mA
ms
10 ms
ton
toff
3
Current Limit
TJ = 25°C
0.65
0.6
1
1
1.25
VI(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit
IOS
Short-circuit output current
A
–40°C ≤ TJ ≤ 125°C
1.3
Supply Current (TPS2041B/TPS2051B)
Supply current, low-level output
TJ = 25°C
0.5
0.5
43
1
5
No load on OUT,
VI(EN) = 5.5 V or VI(EN) = 0 V
mA
mA
–40°C ≤ TJ ≤ 125°C
TJ = 25°C
60
70
No load on OUT,
VI(EN) = 0 V or VI(EN) = 5.5 V
Supply current, high-level output
Leakage current
–40°C ≤ TJ ≤ 125°C
43
OUT connected to ground,
VI(EN) = 5.5 V or VI(EN) = 0 V
VI(OUTx) = 5.5 V, IN = ground(2)
–40°C ≤ TJ ≤ 125°C
1
0
mA
mA
Reverse leakage current
TJ = 25°C
Supply Current (TPS2042B)
TJ = 25°C
0.5
0.5
50
50
1
1
5
Supply current, low-level output
Supply current, high-level output
No load on OUT, VI( ENx ) = 5.5 V
No load on OUT, VI( ENx ) = 0 V
mA
mA
–40°C ≤ TJ ≤ 125°C
TJ = 25°C
70
90
–40°C ≤ TJ ≤ 125°C
–40°C ≤ TJ ≤ 125°C
TJ = 25°C
Leakage current
OUT connected to ground, VI( ENx ) = 5.5 V
VI(OUTx) = 5.5 V, IN = ground(2)
mA
mA
Reverse leakage current
Undervoltage Lockout
Low-level input voltage, IN, INx
Hysteresis, IN, INx
0.2
2
4
2.5
V
TJ = 25°C
75
8
mV
Overcurrent (OC, OCx )
Output low voltage, VOL(/OCx)
Off-state current(2)
IO( OCx ) = 5 mA
0.4
1
V
VO( OCx ) = 5 V or 3.3 V
OCx assertion or deassertion
mA
OC deglitch(2)
15 ms
Thermal Shutdown(3)
Thermal shutdown threshold(2)
Recovery from thermal shutdown(2)
Hysteresis(2)
135
125
°C
°C
°C
10
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be accounted for separately.
(2) Specified by design
(3) The thermal shutdown only reacts under overcurrent conditions.
4
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