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TMS320F2812ZHHAR 参数 Datasheet PDF下载

TMS320F2812ZHHAR图片预览
型号: TMS320F2812ZHHAR
PDF下载: 下载PDF文件 查看货源
内容描述: [C2000™ 32-bit MCU with 150 MHz, 256 KB Flash, EMIF 179-BGA MICROSTAR -40 to 85]
分类和应用: 微控制器和处理器外围集成电路数字信号处理器装置可编程只读存储器时钟
文件页数/大小: 170 页 / 1662 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SPRS174S – APRIL 2001 – REVISED MARCH 2011
www.ti.com
6.27 External Interface Ready-on-Write Timing With One External Wait State
Table 6-39. External Memory Interface Write Switching Characteristics (Ready-on-Write, 1 Wait State)
PARAMETER
t
d(XCOH-XZCSL)
t
d(XCOHL-XZCSH)
t
d(XCOH-XA)
t
d(XCOHL-XWEL)
t
d(XCOHL-XWEH)
t
d(XCOH-XRNWL)
t
d(XCOHL-XRNWH)
t
en(XD)XWEL
t
d(XWEL-XD)
t
h(XA)XZCSH
t
h(XD)XWE
t
dis(XD)XRNW
(1)
(2)
Delay time, XCLKOUT high to zone chip-select active-low
Delay time, XCLKOUT high or low to zone chip-select inactive-high
Delay time, XCLKOUT high to address valid
Delay time, XCLKOUT high/low to XWE low
Delay time, XCLKOUT high/low to XWE high
Delay time, XCLKOUT high to XR/W low
Delay time, XCLKOUT high/low to XR/W high
Enable time, data bus driven from XWE low
Delay time, data valid after XWE active-low
Hold time, address valid after zone chip-select inactive-high
Hold time, write data valid after XWE inactive-high
Maximum time for DSP to release the data bus after XR/W inactive-high
(1)
MIN
–2
MAX
1
3
2
2
2
1
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
–2
0
1
4
TW – 2
(2)
4
ns
During inactive cycles, the XINTF address bus will always hold the last address put out on the bus. This includes alignment cycles.
TW = trail period, write access. See
Table 6-40. Synchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)
(1)
MIN
t
su(XRDYsynchL)XCOHL
t
h(XRDYsynchL)
t
e(XRDYsynchH)
t
su(XRDYsynchH)XCOHL
t
h(XRDYsynchH)XZCSH
(1)
Setup time, XREADY (synchronous) low before XCLKOUT high/low
Hold time, XREADY (synchronous) low
Earliest time XREADY (synchronous) can go high before the sampling
XCLKOUT edge
Setup time, XREADY (synchronous) high before XCLKOUT high/low
Hold time, XREADY (synchronous) held high after zone chip-select high
15
0
15
12
3
MAX
UNIT
ns
ns
ns
ns
ns
The first XREADY (synchronous) sample occurs with respect to E in
E = (XWRLEAD + XWRACTIVE) t
c(XTIM)
When first sampled, if XREADY (synchronous) is found to be high, then the access will complete. If XREADY (synchronous) is found to
be low, it will be sampled again each t
c(XTIM)
until it is found to be high.
For each sample, setup time from the beginning of the access can be calculated as:
D = (XWRLEAD + XWRACTIVE + n – 1) t
c(XTIM)
– t
su(XRDYsynchL)XCOHL
where n is the sample number (n = 1, 2, 3, and so forth).
Table 6-41. Asynchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)
(1)
MIN
t
su(XRDYasynchL)XCOHL
t
h(XRDYasynchL)
t
e(XRDYasynchH)
t
su(XRDYasynchH)XCOHL
t
h(XRDYasynchH)XZCSH
(1)
Setup time, XREADY (asynchronous) low before XCLKOUT high/low
Hold time, XREADY (asynchronous) low
Earliest time XREADY (asynchronous) can go high before the sampling
XCLKOUT edge
Setup time, XREADY (asynchronous) high before XCLKOUT high/low
Hold time, XREADY (asynchronous) held high after zone chip-select high
11
0
11
8
3
MAX
UNIT
ns
ns
ns
ns
ns
The first XREADY (synchronous) sample occurs with respect to E in
E = (XWRLEAD + XWRACTIVE – 2) t
c(XTIM)
When first sampled, if XREADY (asynchronous) is found to be high, then the access will complete. If XREADY (asynchronous) is found
to be low, it will be sampled again each t
c(XTIM)
until it is found to be high.
For each sample, setup time from the beginning of the access can be calculated as:
D = (XWRLEAD + XWRACTIVE – 3 + n) t
c(XTIM)
– t
su(XRDYasynchL)XCOHL
where n is the sample number (n = 1, 2, 3, and so forth).
136
Electrical Specifications
Copyright © 2001–2011, Texas Instruments Incorporated
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