OPA861
www.ti.com
SBOS338–AUGUST 2005
ELECTRICAL CHARACTERISTICS: VS = +5V
RL = 500Ω to VS/2 and RADJ = 250Ω, unless otherwise noted.
OPA861ID, IDBV
TYP
MIN/MAX OVER TEMPERATURE
0°C to
70°C(3)
–40°C to
+85°C(3)
MIN/
MAX
TEST
LEVEL(1)
PARAMETER
CONDITIONS
+25°C
+25°C(2)
UNITS
OTA—Open-Loop (see Figure 30)
AC PERFORMANCE
G = +5, VO = 200mVPP
,
Bandwidth
73
72
72
70
MHz
min
B
RL = 500Ω
G = +5, VO = 1VPP
73
410
4.4
MHz
V/µs
ns
typ
min
typ
C
B
C
Slew Rate
G = +5, VO = 2.5V Step
VO = 1V Step
G = +5, VO = 2VPP, 5MHz
RL = 500Ω
395
390
390
Rise Time and Fall Time
Harmonic Distortion
2nd-Harmonic
–67
–57
2.4
1.7
5.2
–55
–50
3.0
–54
–49
3.3
–54
–48
3.4
dB
max
max
max
max
max
B
B
B
B
B
3rd-Harmonic
RL = 500Ω
dB
Base Input Voltage Noise
Base Input Current Noise
Emitter Input Current Noise
OTA DC PERFORMANCE(4) (see Figure 30)
f > 100kHz
nV/√Hz
pA/√Hz
pA/√Hz
f > 100kHz
2.4
2.45
16.6
2.5
f > 100kHz
15.3
17.5
Minimum OTA Transconductance (gm
)
VO = ±10mV, RC = 50Ω, RE = 0Ω
VO = ±10mV, RC = 50Ω, RE = 0Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, VC = 0V
85
85
±3
70
67
145
±15
±67
±6
65
mA/V
mA/V
mV
min
max
max
max
max
max
max
max
typ
A
A
A
B
A
B
A
B
C
Maximum OTA Transconductance (gm
)
140
±12
150
B-Input Offset Voltage
±20
Average B-Input Offset Voltage Drift
B-Input Bias Current
±120
±6.6
±25
µV/°C
µA
±1
±5
Average B-Input Bias Current Drift
E-Input Bias Current
±20
±125
±500
nA/°C
µA
±30
±15
±100
±140
±600
Average E-Input Bias Current Drift
C-Output Bias Current
VB = 0V, VC = 0V
nA/°C
µA
VB = 0V, VC = 0V
OTA INPUT (see Figure 30)
Most Positive B-Input Voltage
Least Positive B-Input Voltage
B-Input Impedance
4.2
0.8
3.7
1.3
3.6
1.4
3.6
1.4
V
min
max
typ
B
B
C
B
B
V
kΩ || pF
Ω
455 || 2.1
11.8
Min E-Input Resistance
14.4
7.1
14.9
6.9
15.4
6.7
max
min
Max E-Input Resistance
11.8
Ω
OTA OUTPUT
Maximum E-Output Voltage Compliance
Minimum E-Output Voltage Compliance
E-Output Current, Sinking/Sourcing
Maximum C-Output Voltage Compliance
Minimum C-Output Voltage Compliance
C-Output Current, Sinking/Sourcing
C-Output Impedance
IE = ±1mA
IE = ±1mA
VE = 0
4.2
0.8
3.7
1.3
±7
3.6
1.4
3.6
1.4
V
V
min
max
min
min
max
min
typ
A
A
A
A
A
A
C
±8
±6.5
3.9
±6.5
3.9
mA
V
IC = ±1mA
IC = ±1mA
VC = 0
4.7
4.0
1.0
±7
0.3
1.1
1.1
V
±8
±6.5
±6.5
mA
kΩ || pF
54 || 2
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for 25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 3°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
5
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