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OPA861IDBVR 参数 Datasheet PDF下载

OPA861IDBVR图片预览
型号: OPA861IDBVR
PDF下载: 下载PDF文件 查看货源
内容描述: 宽带运算跨导放大器( OTA ) [Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA)]
分类和应用: 放大器光电二极管
文件页数/大小: 28 页 / 603 K
品牌: TI [ TEXAS INSTRUMENTS ]
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OPA861  
www.ti.com  
SBOS338AUGUST 2005  
ELECTRICAL CHARACTERISTICS: VS = +5V  
RL = 500to VS/2 and RADJ = 250, unless otherwise noted.  
OPA861ID, IDBV  
TYP  
MIN/MAX OVER TEMPERATURE  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
TEST  
LEVEL(1)  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(2)  
UNITS  
OTA—Open-Loop (see Figure 30)  
AC PERFORMANCE  
G = +5, VO = 200mVPP  
,
Bandwidth  
73  
72  
72  
70  
MHz  
min  
B
RL = 500Ω  
G = +5, VO = 1VPP  
73  
410  
4.4  
MHz  
V/µs  
ns  
typ  
min  
typ  
C
B
C
Slew Rate  
G = +5, VO = 2.5V Step  
VO = 1V Step  
G = +5, VO = 2VPP, 5MHz  
RL = 500Ω  
395  
390  
390  
Rise Time and Fall Time  
Harmonic Distortion  
2nd-Harmonic  
–67  
–57  
2.4  
1.7  
5.2  
–55  
–50  
3.0  
–54  
–49  
3.3  
–54  
–48  
3.4  
dB  
max  
max  
max  
max  
max  
B
B
B
B
B
3rd-Harmonic  
RL = 500Ω  
dB  
Base Input Voltage Noise  
Base Input Current Noise  
Emitter Input Current Noise  
OTA DC PERFORMANCE(4) (see Figure 30)  
f > 100kHz  
nV/Hz  
pA/Hz  
pA/Hz  
f > 100kHz  
2.4  
2.45  
16.6  
2.5  
f > 100kHz  
15.3  
17.5  
Minimum OTA Transconductance (gm  
)
VO = ±10mV, RC = 50, RE = 0Ω  
VO = ±10mV, RC = 50, RE = 0Ω  
VB = 0V, RC = 0, RE = 100Ω  
VB = 0V, RC = 0, RE = 100Ω  
VB = 0V, RC = 0, RE = 100Ω  
VB = 0V, RC = 0, RE = 100Ω  
VB = 0V, VC = 0V  
85  
85  
±3  
70  
67  
145  
±15  
±67  
±6  
65  
mA/V  
mA/V  
mV  
min  
max  
max  
max  
max  
max  
max  
max  
typ  
A
A
A
B
A
B
A
B
C
Maximum OTA Transconductance (gm  
)
140  
±12  
150  
B-Input Offset Voltage  
±20  
Average B-Input Offset Voltage Drift  
B-Input Bias Current  
±120  
±6.6  
±25  
µV/°C  
µA  
±1  
±5  
Average B-Input Bias Current Drift  
E-Input Bias Current  
±20  
±125  
±500  
nA/°C  
µA  
±30  
±15  
±100  
±140  
±600  
Average E-Input Bias Current Drift  
C-Output Bias Current  
VB = 0V, VC = 0V  
nA/°C  
µA  
VB = 0V, VC = 0V  
OTA INPUT (see Figure 30)  
Most Positive B-Input Voltage  
Least Positive B-Input Voltage  
B-Input Impedance  
4.2  
0.8  
3.7  
1.3  
3.6  
1.4  
3.6  
1.4  
V
min  
max  
typ  
B
B
C
B
B
V
k|| pF  
455 || 2.1  
11.8  
Min E-Input Resistance  
14.4  
7.1  
14.9  
6.9  
15.4  
6.7  
max  
min  
Max E-Input Resistance  
11.8  
OTA OUTPUT  
Maximum E-Output Voltage Compliance  
Minimum E-Output Voltage Compliance  
E-Output Current, Sinking/Sourcing  
Maximum C-Output Voltage Compliance  
Minimum C-Output Voltage Compliance  
C-Output Current, Sinking/Sourcing  
C-Output Impedance  
IE = ±1mA  
IE = ±1mA  
VE = 0  
4.2  
0.8  
3.7  
1.3  
±7  
3.6  
1.4  
3.6  
1.4  
V
V
min  
max  
min  
min  
max  
min  
typ  
A
A
A
A
A
A
C
±8  
±6.5  
3.9  
±6.5  
3.9  
mA  
V
IC = ±1mA  
IC = ±1mA  
VC = 0  
4.7  
4.0  
1.0  
±7  
0.3  
1.1  
1.1  
V
±8  
±6.5  
±6.5  
mA  
k|| pF  
54 || 2  
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization  
and simulation. (C) Typical value only for information.  
(2) Junction temperature = ambient for 25°C specifications.  
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 3°C at high temperature limit for over  
temperature specifications.  
(4) Current is considered positive out of node.  
5
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