OPA861
www.ti.com
SBOS338–AUGUST 2005
ELECTRICAL CHARACTERISTICS: VS = ±5V
RL = 500Ω and RADJ = 250Ω, unless otherwise noted.
OPA861ID, IDBV
TYP
MIN/MAX OVER TEMPERATURE
0°C to
70°C(3)
–40°C to
+85°C(3)
MIN/
MAX
TEST
LEVEL(1)
PARAMETER
CONDITIONS
+25°C
+25°C(2)
UNITS
OTA — Open-Loop (see Figure 30)
AC PERFORMANCE
G = +5, VO = 200mVPP
,
Bandwidth
80
77
75
74
MHz
min
B
RL = 500Ω
G = +5, VO = 1VPP
G = +5, VO = 5VPP
G = +5, VO = 5V Step
VO = 1V Step
80
80
MHz
MHz
V/µs
ns
typ
typ
min
typ
C
C
B
C
Slew Rate
900
4.4
860
850
840
Rise Time and Fall Time
Harmonic Distortion
G = +5, VO = 2VPP, 5MHz
RL = 500Ω
2nd-Harmonic
–68
–57
2.4
1.7
5.2
–55
–52
3.0
–54
–51
3.3
–53
–49
3.4
dB
max
max
max
max
max
B
B
B
B
B
3rd-Harmonic
RL = 500Ω
dB
Base Input Voltage Noise
Base Input Current Noise
Emitter Input Current Noise
OTA DC PERFORMANCE(4) (see Figure 30)
f > 100kHz
nV/√Hz
pA/√Hz
pA/√Hz
f > 100kHz
2.4
2.45
16.6
2.5
f > 100kHz
15.3
17.5
Minimum OTA Transconductance (gm
)
VO = ±10mV, RC = 50Ω, RE = 0Ω
VO = ±10mV, RC = 50Ω, RE = 0Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, RC = 0Ω, RE = 100Ω
VB = 0V, VC = 0V
95
95
±3
80
77
155
±15
±67
±6
75
mA/V
mA/V
mV
min
max
max
max
max
max
max
max
max
max
A
A
A
B
A
B
A
B
A
B
Maximum OTA Transconductance (gm
)
150
±12
160
B-Input Offset Voltage
±20
Average B-Input Offset Voltage Drift
B-Input Bias Current
±120
±6.6
±25
µV/°C
µA
±1
±30
±5
±5
Average B-Input Bias Current Drift
E-Input Bias Current
±20
±125
±500
±30
±250
nA/°C
µA
±100
±18
±140
±600
±38
Average E-Input Bias Current Drift
C-Output Bias Current
VB = 0V, VC = 0V
nA/°C
µA
VB = 0V, VC = 0V
Average C-Output Bias Current Drift
OTA INPUT (see Figure 30)
B-Input Voltage Range
VB = 0V, VC = 0V
±300
nA/°C
±4.2
455 || 2.1
10.5
±3.7
±3.6
±3.6
V
kΩ || pF
Ω
min
typ
B
C
B
B
B-Input Impedance
Min E-Input Resistance
12.5
6.7
13.0
6.5
13.3
6.3
max
min
Max E-Input Resistance
10.5
Ω
OTA OUTPUT
E-Output Voltage Compliance
E-Output Current, Sinking/Sourcing
C-Output Voltage Compliance
C-Output Current, Sinking/Sourcing
C-Output Impedance
IE = ±1mA
VE = 0
±4.2
±15
±3.7
±10
±4.0
±10
±3.6
±9
±3.6
±9
V
mA
min
min
min
min
typ
A
A
A
A
C
IC = ±1mA
VC = 0
±4.7
±15
±3.9
±9
±3.9
±9
V
mA
54 || 2
kΩ || pF
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for 25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 7°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
3
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