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NE5532PSE4 参数 Datasheet PDF下载

NE5532PSE4图片预览
型号: NE5532PSE4
PDF下载: 下载PDF文件 查看货源
内容描述: [DUAL OP-AMP, 5000uV OFFSET-MAX, 10MHz BAND WIDTH, PDSO8, PLASTIC, SO-8]
分类和应用: 放大器光电二极管
文件页数/大小: 142 页 / 1062 K
品牌: TI [ TEXAS INSTRUMENTS ]
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XIO3130  
www.ti.com  
SLLS693FMAY 2007REVISED JANUARY 2010  
6.7 3.3-V I/O Electrical Characteristics(1)  
PARAMETER  
High-level input voltage(2)  
Low-level input voltage(2)  
Input voltage  
OPERATIONS  
TEST CONDITIONS  
MIN  
MAX  
VDD33  
UNIT  
V
VIH  
VIL  
VI  
VDD33  
VDD33  
0.7 VDD33  
0
0
0
0
0.3 VDD33  
VDD33  
V
V
VO  
tp  
Output voltage(3)  
VDD33  
V
Input transition time (trise and tfall)  
Input hysteresis(4)  
25  
ns  
V
Vhys  
VOH  
VOL  
IOZ  
0.13 VDD33  
High-level output voltage  
Low-level output voltage  
VDD33  
VDD33  
VDD33  
IOH = –4 mA  
IOL = 4 mA  
0.8 VDD33  
V
0.22 VDD33  
±20  
V
(3)  
High-impedance, output current  
VI = 0 to VDD33  
mA  
High-impedance, output current with internal  
pullup or pulldown resistor  
IOZP  
II  
VDD33  
VDD33  
VI = 0 to VDD33  
VI = 0 to VDD33  
±175  
±1  
mA  
mA  
(5)  
(6)  
Input current  
(1) This table applies to PERST, WAKE, REFCLK_SEL, GRST, and GPIO18:0.  
(2) Applies to external inputs and bidirectional buffers.  
(3) Applies to external outputs and bidirectional buffers.  
(4) Applies to PERST and GRST.  
(5) Applies to GRST (pullup resistor) and most GPIO (pullup resistor).  
(6) Applies to external input buffers.  
6.8 POWER CONSUMPTION(1)  
PARAMETER  
MIN  
NOM(2)  
MAX(3)  
20.61  
UNIT  
I3.3V  
11.21  
578.7  
36.99  
868.05  
5.28  
mA  
mA  
mW  
mW  
mA  
I1.5V  
725.8  
P3.3V  
68.01  
P1.5V  
1088.7  
(4)  
IAUX  
(1) Measurements taken at 25°C with nominal power supply, 3.3 V and 1.5 V.  
(2) Nominal conditions are defined as switch only power, no devices downstream, and downstream clocks not running.  
(3) Maximum power conditions are defined as three downstream devices constantly running traffic and downstream clocks running.  
(4) Measurement performed with three devices downstream, system in S5.  
6.9 THERMAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS(1)  
Low K JEDEC test board, 1s (single-signal layer), no air flow  
No air flow  
TYP  
51.2  
30.5  
17.7  
14.7  
7
UNIT  
qJA  
Junction-to-free-air thermal resistance  
°C/W  
High K JEDEC test board, 2s2p  
(double-signal layer, double buried power plane)  
400 LFM  
200 LFM  
Cu cold plate measurement process  
EIA/JESD 51-8  
qJC  
qJB  
Junction-to-case thermal resistance  
Junction-to-board thermal resistance  
Junction-to-top of package  
Junction-to-board  
°C/W  
°C/W  
°C/W  
°C/W  
13.9  
0.5  
ΨJT  
ΨJB  
EIA/JESD 51-2  
EIA/JESD 51-6  
12  
(1) For more details, refer to TI application report IC Package Thermal Metrics (literature number SPRA953).  
Copyright © 2007–2010, Texas Instruments Incorporated  
Electrical Characteristics  
139  
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Product Folder Link(s): XIO3130  
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