MSP430G2955
MSP430G2855
MSP430G2755
www.ti.com
SLAS800 –MARCH 2013
10-Bit ADC, Temperature Sensor and Built-In VMID
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
3 V
3 V
3 V
3 V
3 V
MIN
TYP
60
MAX UNIT
Temperature sensor supply
current(1)
REFON = 0, INCHx = 0Ah,
TA = 25°C
ISENSOR
TCSENSOR
tSensor(sample)
IVMID
µA
mV/°C
µs
(2)
ADC10ON = 1, INCHx = 0Ah
ADC10ON = 1, INCHx = 0Ah,
Error of conversion result ≤ 1 LSB
3.55
Sample time required if channel
30
(3)
10 is selected
(4)
Current into divider at channel 11 ADC10ON = 1, INCHx = 0Bh
µA
ADC10ON = 1, INCHx = 0Bh,
VCC divider at channel 11
VMID
1.5
V
V
MID ≈ 0.5 × VCC
Sample time required if channel
11 is selected
ADC10ON = 1, INCHx = 0Bh,
Error of conversion result ≤ 1 LSB
tVMID(sample)
3 V
1220
ns
(5)
(1) The sensor current ISENSOR is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, ISENSOR is included in IREF+. When REFON = 0, ISENSOR applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2) The following formula can be used to calculate the temperature sensor output voltage:
VSensor,typ = TCSensor (273 + T [°C] ) + VOffset,sensor [mV] or
VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]
(3) The typical equivalent impedance of the sensor is 51 kΩ. The sample time required includes the sensor-on time tSENSOR(on)
(4) No additional current is needed. The VMID is used during sampling.
.
(5) The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX UNIT
VCC(PGM/ERASE) Program or erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
Supply current from VCC during program
Supply current from VCC during erase
Cumulative program time(1)
257
476 kHz
IPGM
2.2 V, 3.6 V
2.2 V, 3.6 V
2.2 V, 3.6 V
2.2 V, 3.6 V
1
1
5
7
mA
mA
IERASE
tCPT
10
ms
tCMErase
Cumulative mass erase time
20
104
100
ms
Program and erase endurance
Data retention duration
105
cycles
years
tFTG
tFTG
tFTG
tFTG
tFTG
tFTG
tRetention
tWord
TJ = 25°C
(2)
Word or byte program time
See
30
25
(2)
tBlock, 0
Block program time for first byte or word
Block program time for each additional byte or word
Block program end-sequence wait time
Mass erase time
See
(2)
tBlock, 1-63
tBlock, End
tMass Erase
tSeg Erase
See
18
(2)
See
6
(2)
See
10593
4819
(2)
Segment erase time
See
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word write, individual byte write, and block write modes.
(2) These values are hardwired into the Flash Controller's state machine (tFTG = 1/fFTG).
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