欢迎访问ic37.com |
会员登录 免费注册
发布采购

LMP91000 参数 Datasheet PDF下载

LMP91000图片预览
型号: LMP91000
PDF下载: 下载PDF文件 查看货源
内容描述: 传感器模拟前端系统:可配置AFE恒电位为低功耗化学传感应用 [Sensor AFE System: Configurable AFE Potentiostat for Low-Power Chemical Sensing Applications]
分类和应用: 传感器
文件页数/大小: 25 页 / 556 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号LMP91000的Datasheet PDF文件第1页浏览型号LMP91000的Datasheet PDF文件第2页浏览型号LMP91000的Datasheet PDF文件第4页浏览型号LMP91000的Datasheet PDF文件第5页浏览型号LMP91000的Datasheet PDF文件第6页浏览型号LMP91000的Datasheet PDF文件第7页浏览型号LMP91000的Datasheet PDF文件第8页浏览型号LMP91000的Datasheet PDF文件第9页  
For soldering specifications:  
see product folder at www.national.com and  
www.national.com/ms/MS/MS-SOLDERING.pdf  
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the Texas Instruments Sales Office/  
Distributors for availability and specifications.  
Operating Ratings (Note 1)  
Supply Voltage VS=(VDD - AGND)  
ESD Tolerance (Note 2)  
Human Body Model  
2.7V to 5.25V  
-40°C to 85°C  
2kV  
Temperature Range (Note 4)  
Package Thermal Resistance (Note 4)  
Charge-Device Model  
Machine Model  
1kV  
200V  
14-Pin LLP (θJA  
)
44 °C/W  
Voltage between any two pins  
Current through VDD or VSS  
Current sunk and sourced by CE pin  
Current out of other pins(Note 3)  
Storage Temperature Range  
Junction Temperature (Note 4)  
6.0V  
50mA  
10mA  
5mA  
-65°C to 150°C  
150°C  
Electrical Characteristics (Note 5)  
Unless otherwise specified, all limits guaranteed for TA = 25°C, VS=(VDD – AGND), VS=3.3V and AGND = DGND =0V,  
VREF= 2.5V, Internal Zero= 20% VREF. Boldface limits apply at the temperature extremes.  
Min  
Typ  
Max  
Symbol  
Parameter  
Conditions  
Units  
(Note 7) (Note 6) (Note 7)  
Power Supply Specification  
IS  
Supply Current  
3-lead amperometric cell mode  
MODECN = 0x03  
15  
13.5  
10  
Standby mode  
MODECN = 0x02  
10  
6.5  
8
Temperature Measurement mode with TIA OFF  
MODECN = 0x06  
15  
11.4  
13.5  
µA  
Temperature Measurement mode with TIA ON  
MODECN = 0x07  
20  
14.9  
18  
2-lead ground referred galvanic cell mode  
VREF=1.5V  
MODECN = 0x01  
9
6.2  
8
Deep Sleep mode  
MODECN = 0x00  
1
0.6  
0.85  
Potentiostat  
Bias_RW  
Bias Programming range  
(differential voltage between RE  
pin and WE pin)  
Percentage of voltage referred to VREF or VDD  
±24  
%
%
Bias Programming Resolution First two smallest step  
±1  
±2  
All other steps  
VDD=2.7V;  
-90  
90  
Internal Zero 50% VDD  
Input bias current at RE pin  
-800  
800  
IRE  
pA  
VDD=5.25V;  
-90  
90  
Internal Zero 50% VDD  
-900  
900  
ICE  
Minimum operating current  
capability  
sink  
750  
750  
10  
µA  
mA  
dB  
source  
sink  
Minimum charging capability  
(Note 9)  
source  
10  
AOL_A1  
en_RW  
Open loop voltage gain of  
control loop op amp (A1)  
300mVVCEVs-300mV;  
-750µAICE750µA  
104  
120  
Low Frequency integrated noise 0.1Hz to 10Hz, Zero Bias  
between RE pin and WE pin  
3.4  
5.1  
(Note 10)  
µVpp  
0.1Hz to 10Hz, with Bias  
(Note 10, Note 11)  
3
www.ti.com  
 复制成功!