CSD17313Q2
www.ti.com
SLPS260A –MARCH 2010–REVISED MARCH 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
1.6
1.4
1.2
1
10
1
ID = 4A
VGS = 8V
TC = 125°C
0.1
TC = 25°C
0.8
0.6
0.4
0.2
0.01
0.001
0.0001
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature - °C
VSD - Source-to-Drain Voltage - V
G007
G008
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
100
10
1
10
1
1ms
10ms
TC = 25°C
10101m10s
1s
Area Limited
by RDS(on)
0.1
0.01
DC
TC = 125°C
Single Pulse
Typical RθJA = 182°C/W (min Cu)
0.01
0.1
1
10
100
0.01
0.1
1
10
VDS - Drain-to-Source Voltage - V
t(AV) - Time in Avalanche - ms
G009
G010
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
6
5
4
3
2
1
0
-50
-25
0
25
50
75
100 125 150 175
TC - Case Temperature - °C
G011
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
Submit Documentation Feedback
5
TI [ TEXAS INSTRUMENTS ]
