CSD17313Q2
SLPS260A –MARCH 2010–REVISED MARCH 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
VDS = 5V
VGS = 8V
TC = 125°C
TC = 25°C
VGS = 4.5V
VGS = 3.5V
VGS = 3V
VGS = 2.5V
TC = -55°C
0
0.2
0.4
0.6
0.8
1
1
0
0
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
VDS - Drain-to-Source Voltage - V
VGS - Gate-to-Source Voltage - V
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
8
7
6
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID = 4A
VDS = 15V
f = 1MHz
VGS = 0V
Coss = Cds + Cgd
Ciss = Cgd + Cgs
Crss = Cgd
0
0.5
1
1.5
2
2.5
3
3.5
4
5
10
15
20
25
30
Qg - Gate Charge - nC
VDS - Drain-to-Source Voltage - V
G003
G004
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1
ID = 4A
ID = 250µA
TC = 125°C
0.8
0.6
0.4
0.2
0
TC = 25°C
-75
-25
25
75
125
175
1
2
3
4
5
6
7
8
9
10
TC - Case Temperature - °C
VGS - Gate-to-Source Voltage - V
G005
G006
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
TI [ TEXAS INSTRUMENTS ]
