欢迎访问ic37.com |
会员登录 免费注册
发布采购

CSD17313Q2 参数 Datasheet PDF下载

CSD17313Q2图片预览
型号: CSD17313Q2
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N通道NexFET™功率MOSFET [30V N-Channel NexFET™ Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
文件页数/大小: 9 页 / 318 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号CSD17313Q2的Datasheet PDF文件第1页浏览型号CSD17313Q2的Datasheet PDF文件第3页浏览型号CSD17313Q2的Datasheet PDF文件第4页浏览型号CSD17313Q2的Datasheet PDF文件第5页浏览型号CSD17313Q2的Datasheet PDF文件第6页浏览型号CSD17313Q2的Datasheet PDF文件第7页浏览型号CSD17313Q2的Datasheet PDF文件第8页浏览型号CSD17313Q2的Datasheet PDF文件第9页  
CSD17313Q2  
SLPS260A MARCH 2010REVISED MARCH 2010  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ELECTRICAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
Static Characteristics  
TEST CONDITIONS  
MIN  
TYP MAX UNIT  
BVDSS  
IDSS  
Drain to Source Voltage  
VGS = 0V, ID = 250mA  
30  
V
Drain to Source Leakage  
Gate to Source Leakage  
Gate to Source Threshold Voltage  
VGS = 0V, VDS = 24V  
VDS = 0V, VGS = +10 / -8V  
VDS = VGS, ID = 250mA  
VGS = 3V, ID = 4A  
1
100  
1.8  
42  
mA  
nA  
V
IGSS  
VGS(th)  
0.9  
1.3  
31  
26  
24  
16  
mΩ  
mΩ  
mΩ  
S
RDS(on)  
Drain to Source On Resistance  
Transconductance  
VGS = 4.5V, ID = 4A  
VGS = 8V, ID = 4A  
32  
30  
gfs  
VDS = 15V, ID = 4A  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
RG  
Input Capacitance  
260 340  
140 180  
pF  
pF  
pF  
Ω
VGS = 0V, VDS = 15V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Series Gate Resistance  
Gate Charge Total (4.5V)  
Gate Charge – Gate to Drain  
Gate Charge Gate to Source  
Gate Charge at Vth  
Output Charge  
13  
1.3  
2.1  
0.4  
0.7  
0.3  
3.8  
2.8  
3.9  
4.2  
1.3  
17  
2.6  
2.7  
Qg  
nC  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Qgd  
Qgs  
Qg(th)  
Qoss  
td(on)  
tr  
VDS = 15V,  
ID = 4A  
VDS = 13.5V, VGS = 0V  
Turn On Delay Time  
Rise Time  
VDS = 15V, VGS = 4.5V,  
ID = 4A, RG = 2Ω  
td(off)  
tf  
Turn Off Delay Time  
Fall Time  
Diode Characteristics  
VSD  
Qrr  
trr  
Diode Forward Voltage  
ISD = 4A, VGS = 0V  
0.85  
6.4  
1
V
Reverse Recovery Charge  
Reverse Recovery Time  
nC  
ns  
VDD= 13.5V, IF = 4A,  
di/dt = 300A/ms  
12.9  
THERMAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
MIN  
TYP MAX UNIT  
7.4 °C/W  
RqJC  
RqJA  
Thermal Resistance Junction to Case(1)  
Thermal Resistance Junction to Ambient(1)(2)  
67 °C/W  
(1)  
R
qJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×  
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.  
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.  
2
Submit Documentation Feedback  
Copyright © 2010, Texas Instruments Incorporated  
 
 复制成功!