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BQ4011MA-70N 参数 Datasheet PDF下载

BQ4011MA-70N图片预览
型号: BQ4011MA-70N
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8非易失SRAM [32Kx8 Nonvolatile SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 728 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号BQ4011MA-70N的Datasheet PDF文件第2页浏览型号BQ4011MA-70N的Datasheet PDF文件第3页浏览型号BQ4011MA-70N的Datasheet PDF文件第4页浏览型号BQ4011MA-70N的Datasheet PDF文件第5页浏览型号BQ4011MA-70N的Datasheet PDF文件第7页浏览型号BQ4011MA-70N的Datasheet PDF文件第8页浏览型号BQ4011MA-70N的Datasheet PDF文件第9页浏览型号BQ4011MA-70N的Datasheet PDF文件第10页  
bq4011/bq4011Y  
Write Cycle (T = T  
, V  
V  
V  
)
A
OPR CCmin  
CC  
CCmax  
-70/-70N  
-100  
-150/-150N  
-200  
Min. Max. Min. Max. Min. Max. Min. Max.  
Symbol  
tWC  
Parameter  
Units  
ns  
Conditions/Notes  
Write cycle time  
70  
55  
-
-
100  
90  
-
-
150  
100  
-
-
200  
150  
-
-
Chip enable to  
end of write  
tCW  
ns  
(1)  
(1)  
Address valid to  
end of write  
tAW  
55  
0
-
-
80  
0
-
-
90  
0
-
-
150  
0
-
-
ns  
ns  
Measured from  
address valid to  
beginning of write. (2)  
Ad dr es s s et u p  
time  
tAS  
Measured from  
beginning of write to  
end of write. (1)  
Write pulse  
width  
tWP  
55  
5
-
-
-
-
-
-
75  
5
-
-
-
-
-
-
90  
5
-
-
-
-
-
-
130  
5
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
Write recovery  
time (write  
cycle 1)  
Measured from WE  
going high to end of  
write cycle. (3)  
tWR1  
tWR2  
tDW  
Write recovery  
time (write  
cycle 2)  
Measured from CE  
going high to end of  
write cycle. (3)  
15  
30  
0
15  
40  
0
15  
50  
0
15  
70  
0
Measured from first  
low-to-high transition  
of either CE or WE.  
Data valid to end  
of write  
Measured from WE  
going high to end of  
write cycle. (4)  
Data hold time  
(write cycle 1)  
tDH1  
Measured from CE  
going high to end of  
write cycle.(4)  
Data hold time  
(write cycle 2)  
tDH2  
0
0
0
0
Write enabled to  
output in high Z  
I/O pins are in output  
state. (5)  
tWZ  
0
5
25  
-
0
5
35  
-
0
5
50  
-
0
5
70  
-
ns  
ns  
Output active  
from end of write  
I/O pins are in output  
state. (5)  
tOW  
Notes:  
1. A write ends at the earlier transition of CE going high and WE going high.  
2. A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition  
of CE going low and WE going low.  
3. Either tWR1 or tWR2 must be met.  
4. Either tDH1 or tDH2 must be met.  
5. If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in  
high-impedance state.  
Aug. 1993 C  
6
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