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BQ24735 参数 Datasheet PDF下载

BQ24735图片预览
型号: BQ24735
PDF下载: 下载PDF文件 查看货源
内容描述: 1-4节锂电池SMBus充电控制器与N通道功率MOSFET选择支持睿频加速模式 [1-4 Cell Li Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector]
分类和应用: 电池控制器
文件页数/大小: 42 页 / 1517 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq24735  
SLUSAK9 SEPTEMBER 2011  
www.ti.com  
PCB Layout  
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the  
components to minimize high frequency current path loop (see Figure 25) is important to prevent electrical and  
magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper  
layout. Layout PCB according to this specific order is essential.  
1. Place input capacitor as close as possible to switching MOSFETs supply and ground connections and use  
shortest copper trace connection. These parts should be placed on the same layer of PCB instead of on  
different layers and using vias to make this connection.  
2. The IC should be placed close to the switching MOSFETs gate terminals and keep the gate drive signal  
traces short for a clean MOSFET drive. The IC can be placed on the other side of the PCB of switching  
MOSFETs.  
3. Place inductor input terminal to switching MOSFETs output terminal as close as possible. Minimize the  
copper area of this trace to lower electrical and magnetic field radiation but make the trace wide enough to  
carry the charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic  
capacitance from this area to any other trace or plane.  
4. The charging current sensing resistor should be placed right next to the inductor output. Route the sense  
leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop  
area) and do not route the sense leads through a high-current path (see Figure 26 for Kelvin connection for  
best current accuracy). Place decoupling capacitor on these traces next to the IC  
5. Place output capacitor next to the sensing resistor output and ground  
6. Output capacitor ground connections need to be tied to the same copper that connects to the input capacitor  
ground before connecting to system ground.  
7. Use single ground connection to tie charger power ground to charger analog ground. Just beneath the IC  
use analog ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling  
8. Route analog ground separately from power ground. Connect analog ground and connect power ground  
separately. Connect analog ground and power ground together using power pad as the single ground  
connection point. Or using a 0Ω resistor to tie analog ground to power ground (power pad should tie to  
analog ground in this case if possible).  
9. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible  
10. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground.  
Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the  
other layers.  
11. The via size and number should be enough for a given current path.  
See the EVM design for the recommended component placement with trace and via locations. For the QFN  
information, See SCBA017 and SLUA271.  
R1  
L1  
VBAT  
PHASE  
High  
Frequency  
Current  
Path  
VIN  
BAT  
GND  
C2  
C1  
Figure 25. High Frequency Current Path  
34  
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Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s) :bq24735  
 
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