欢迎访问ic37.com |
会员登录 免费注册
发布采购

BQ24735 参数 Datasheet PDF下载

BQ24735图片预览
型号: BQ24735
PDF下载: 下载PDF文件 查看货源
内容描述: 1-4节锂电池SMBus充电控制器与N通道功率MOSFET选择支持睿频加速模式 [1-4 Cell Li Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector]
分类和应用: 电池控制器
文件页数/大小: 42 页 / 1517 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号BQ24735的Datasheet PDF文件第23页浏览型号BQ24735的Datasheet PDF文件第24页浏览型号BQ24735的Datasheet PDF文件第25页浏览型号BQ24735的Datasheet PDF文件第26页浏览型号BQ24735的Datasheet PDF文件第28页浏览型号BQ24735的Datasheet PDF文件第29页浏览型号BQ24735的Datasheet PDF文件第30页浏览型号BQ24735的Datasheet PDF文件第31页  
bq24735  
www.ti.com  
SLUSAK9 SEPTEMBER 2011  
If frequency is reduced, for a fixed inductor the current ripple is increased. Inductor value must be carefully  
selected so that it will not trig cycle-by-cycle peak over current protection even for the worst condition such as  
higher input voltage, 50% duty cycle, lower inductance and lower switching frequency.  
Inductor Short, MOSFET Short Protection  
The bq24735 has a unique short circuit protection feature. Its cycle-by-cycle current monitoring feature is  
achieved through monitoring the voltage drop across RDS(on) of the MOSFETs after a certain amount of blanking  
time. In case of MOSFET short or inductor short circuit, the over current condition is sensed by two comparators  
and two counters will be triggered. After seven times of short circuit events, the charger will be latched off and  
ACFET and RBFET are turned off to disconnect adapter from system. BATFET is turned on to connect battery  
pack to system. To reset the charger from latch-off status, the IC VCC pin must be pulled below UVLO or the  
ACDET pin must be pulled below 0.6V. This can be achieved by removing the adapter and shut down the  
operation system. The low side MOSFET short circuit voltage drop threshold can be adjusted via SMBus  
command. ChargeOption() bit[7] =0, 1 set the low side threshold 135mV and 230mV respectively. The high side  
MOSFET short circuit voltage drop threshold can be adjusted via SMBus command. ChargeOption() bit[8] = 0, 1  
disable the function and set the threshold 750mV respectively. During boost function, the low side MOSFET short  
circuit protection threshold is used for cycle-by-cycle current limiting, charger will not latch up.  
Due to the certain amount of blanking time to prevent noise when MOSFET just turn on, the cycle-by-cycle  
charge over-current protection may detect high current and turn off MOSFET first before the short circuit  
protection circuit can detect short condition because the blanking time has not finished. In such a case the  
charger may not be able to detect short circuit and counter may not be able to count to seven then latch off.  
Instead the charger may continuously keep switching with very narrow duty cycle to limit the cycle-by-cycle  
current peak value. However, the charger should still be safe and will not cause failure because the duty cycle is  
limited to a very short of time and MOSFET should be still inside the safety operation area. During a soft start  
period, it may takes long time instead of just seven switching cycles to detect short circuit based on the same  
blanking time reason.  
Table 8. Component List for Typical System Circuit of Figure 1  
PART DESIGNATOR  
QTY  
6
DESCRIPTION  
C1, C2, C3, C13, C14, C16  
Capacitor, Ceramic, 0.1µF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 100pF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 1µF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 0.047µF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 10µF, 25V, 10%, X7R, 1206  
Capacitor, Ceramic, 0.01µF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 2200pF, 25V, 10%, X7R, 0603  
Capacitor, Ceramic, 2.2µF, 25V, 10%, X7R, 1210  
Capacitor, Electrolytic, 220µF, 25V  
C4  
1
C5, C6  
2
C7  
1
C8, C9, C10, C11  
4
C15  
1
C17  
1
Ci  
1
Csys  
1
D1  
1
Diode, Schottky, 30V, 200mA, SOT-23, Fairchild, BAT54  
Diode, Dual Schottky, 30V, 200mA, SOT-23, Fairchild, BAT54C  
N-channel MOSFET, 30V, 12.5A, SO-8, Fairchild, FDS6680A  
N-channel MOSFET, 30V, 12A, PowerPAK 1212-8, Vishay Siliconix, SiS412DN  
N-channel MOSFET, 50V, 0.2A, SOT-323, Diodes, BSS138W  
Inductor, SMT, 4.7µH, 5.5A, Vishay Dale, IHLP2525CZER4R7M01  
Resistor, Chip, 430k, 1/10W, 1%, 0603  
D2  
1
Q1, Q2, Q5  
3
Q3, Q4  
2
Q6  
1
L1  
1
R1  
1
R2  
1
Resistor, Chip, 66.5k, 1/10W, 1%, 0603  
R3, R4, R5  
3
Resistor, Chip, 10k, 1/10W, 1%, 0603  
R6, R10, R11  
3
Resistor, Chip, 4.02k, 1/10W, 1%, 0603  
R7  
1
Resistor, Chip, 316k, 1/10W, 1%, 0603  
R8  
1
Resistor, Chip, 100k, 1/10W, 1%, 0603  
R9  
1
Resistor, Chip, 10, 1/4W, 1%, 1206  
R12  
R13  
1
Resistor, Chip, 1.00M, 1/10W, 1%, 0603  
1
Resistor, Chip, 3.01M, 1/10W, 1%, 0603  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
27  
Product Folder Link(s) :bq24735  
 复制成功!