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BQ24170 参数 Datasheet PDF下载

BQ24170图片预览
型号: BQ24170
PDF下载: 下载PDF文件 查看货源
内容描述: 1.6 MHz的同步开关模式锂离子和锂聚合物独立型电池充电器 [1.6-MHz Synchronous Switch-Mode Li-Ion and Li-Polymer Stand-Alone Battery Charger]
分类和应用: 电池开关
文件页数/大小: 35 页 / 2181 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号BQ24170的Datasheet PDF文件第24页浏览型号BQ24170的Datasheet PDF文件第25页浏览型号BQ24170的Datasheet PDF文件第26页浏览型号BQ24170的Datasheet PDF文件第27页浏览型号BQ24170的Datasheet PDF文件第29页浏览型号BQ24170的Datasheet PDF文件第30页浏览型号BQ24170的Datasheet PDF文件第31页浏览型号BQ24170的Datasheet PDF文件第32页  
bq24170  
bq24172  
SLUSAD2A NOVEMBER 2010REVISED NOVEMBER 2010  
www.ti.com  
A cost effective and small size solution is shown in Figure 24. R1 and C1 are composed of a damping RC  
network to damp the hot plug-in oscillation. As a result, the over-voltage spike is limited to a safe level. D1 is  
used for reverse voltage protection for the AVCC pin. C2 is the AVCC pin decoupling capacitor and it should be  
placed as close as possible to the AVCC pin. R2 and C2 form a damping RC network to further protect the IC  
from high dv/dt and high voltage spike. The C2 value should be less than the C1 value so R1 can dominant the  
equivalent ESR value to get enough damping effect for hot plug-in. R1 and R2 must be sized enough to handle  
in-rush current power loss according to the resistor manufacturer’s datasheet. The filter component values  
always need to be verified with a real application and minor adjustments may be needed to fit in the real  
application circuit.  
D1  
R2(1206)  
R1(2010)  
2W  
4.7 - 30 W  
Adapter  
Connector  
AVCC pin  
C1  
2.2 mF  
C2  
0.1 - 1 mF  
Figure 24. Input Filter  
INPUT ACFET AND RBFET SELECTION  
N-type MOSFETs are used as input ACFET(Q1) and RBFET(Q2) for better cost effective and small size solution,  
as shown in Figure 22. Normally, there are around 50uF capacitor totally connected at PVCC node --- 10uF  
capacitor for buck converter of bq24170/2 and 40uF capacitor for system side. There is a surge current during  
Q1 turn-on period when a valid adapter is inserted. Decreasing the turn-on speed of Q1 can limit this surge  
current in desirable range by selecting a MOSFET with relative bigger CGD and/or CGS. At the case Q1 turn on  
too fast, we need add external CGD and/or CGS. For example, 4.7nF CGD and 47nF CGS are adopted on EVM  
while using NexFET CSD17313 as Q1.  
Q2  
Q1  
ADAPTER  
SYS  
RSNS  
C4  
1m  
SYS  
C
40  
R
IN  
?
2
RGS  
499k  
CGS  
C
IN  
CGD  
PVCC  
CMSRC  
ACDRV  
?
2.2  
R12  
4.02k  
R11  
4.02k  
Figure 25. Input ACFET and RBFET  
PCB LAYOUT  
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the  
components to minimize the high frequency current path loop (see Figure 26) is important to prevent electrical  
and magnetic field radiation and high frequency resonant problems. The following is a PCB layout priority list for  
proper layout. Layout of the PCB according to this specific order is essential.  
1. Place input capacitor as close as possible to the PVCC supply and ground connections and use the shortest  
copper trace connection. These parts should be placed on the same layer of the PCB instead of on different  
layers and using vias to make this connection.  
2. Place the inductor input terminal as close as possible to the SW terminal. Minimize the copper area of this  
trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the charging  
current. Do not use multiple layers in parallel for this connection. Minimize parasitic capacitance from this  
area to any other trace or plane.  
3. The charging current sensing resistor should be placed right next to the inductor output. Route the sense  
28  
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): bq24170 bq24172  
 
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