bq24170
bq24172
SLUSAD2A –NOVEMBER 2010–REVISED NOVEMBER 2010
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ELECTRICAL CHARACTERISTICS (continued)
4.5V ≤ V(PVCC, AVCC) ≤ 17V, –40°C < TJ + 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
CHARGE TERMINATION
KTERM
Termination current set factor
Percentage of fast charge current
VSRP-SRN = 4 mV
10%(3)
–25%
–40%
25%
40%
ms
Termination current regulation accuracy
VSRP-SRN = 2 mV
tTERM_DEG
tQUAL
Deglitch time for termination (both edges)
Termination qualification time
100
250
2
VSRN > VRECH and ICHG < ITERM
ms
IQUAL
Termination qualification current
Discharge current once termination is detected
mA
INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)
VUVLO
AC under-voltage rising threshold
AC under-voltage hysteresis, falling
Measure on AVCC
Measure on AVCC
3.4
50
3.6
3.8
V
VUVLO_HYS
300
mV
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
VSLEEP
SLEEP mode threshold
VAVCC – VSRN falling
VAVCC – VSRN rising
VAVCC – VSRN falling
VAVCC – VSRN falling
90
200
1
150
mV
mV
ms
ms
VSLEEP_HYS
SLEEP mode hysteresis
tSLEEP_FALL_CD
tSLEEP_FALL_FETOFF
SLEEP deglitch to disable charge
SLEEP deglitch to turn off input FETs
5
Deglitch to enter SLEEP mode, disable
VREF and enter low quiescent mode
tSLEEP_FALL
VAVCC – VSRN falling
VAVCC – VSRN rising
100
30
ms
ms
Deglitch to exit SLEEP mode, and enable
VREF
tSLEEP_PWRUP
ACN-SRN COMPARATOR
VACN-SRN
Threshold to turn on BATFET
VACN-SRN falling
VACN-SRN rising
VACN-SRN falling
VACN-SRN rising
150
220
100
2
300
mV
mV
ms
µs
VACN-SRN_HYS
tBATFETOFF_DEG
tBATFETON_DEG
Hysteresis to turn off BATFET
Deglitch to turn on BATFET
Deglitch to turn off BATFET
50
BAT LOWV COMPARATOR
bq24170, CELL to AGND, 1 cell, measure on
SRN
2.87
5.74
2.9
5.8
2.93
5.86
bq24170, CELL floating, 2 cells, measure on
SRN
VLOWV
Precharge to fast charge transition
V
bq24170, CELL to VREF, 3 cells, measure on
SRN
8.61
1.43
8.7
1.45
200
8.79
1.47
bq24172, measure on FB
bq24170, CELL to AGND, 1 cell, measure on
SRN
bq24170, CELL floating, 2 cells, measure on
SRN
400
600
VLOWV_HYS
Fast charge to precharge hysteresis
mV
bq24170, CELL to VREF, 3 cells, measure on
SRN
bq24172, measure on FB
100
25
tpre2fas
tfast2pre
VLOWV rising deglitch
VLOWV falling deglitch
Delay to start fast charge current
Delay to start precharge current
ms
ms
25
RECHARGE COMPARATOR
bq24170, CELL to AGND, 1 cell, measure on
SRN
70
100
200
300
130
260
bq24170, CELL floating, 2 cells, measure on
SRN
Recharge Threshold, below regulation
140
VRECHG
voltage limit, VBAT_REG-VSRN (bq24170), or
VFB_REG-VFB (bq24172)
mV
bq24170, CELL to VREF, 3 cells, measure on
SRN
210
35
390
65
bq24172, measure on FB
50
10
10
tRECH_RISE_DEG
tRECH_FALL_DEG
VRECHG rising deglitch
VRECHG falling deglitch
VFB decreasing below VRECHG
VFB increasing above VRECHG
ms
ms
(3) The minimum current is 120 mA on 10mΩ sense resistor.
10
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