bq24170
bq24172
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SLUSAD2A –NOVEMBER 2010–REVISED NOVEMBER 2010
ELECTRICAL CHARACTERISTICS (continued)
4.5V ≤ V(PVCC, AVCC) ≤ 17V, –40°C < TJ + 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
INTERNAL PWM
fsw
PWM Switching Frequency
Driver Dead Time(5)
1360
1600
30
1840
kHz
ns
Dead time when switching between LSFET and
HSFET no load
tSW_DEAD
RDS_HI
RDS_LO
High Side MOSFET On Resistance
Low Side MOSFET On Resistance
VBTST – VSW = 4.5 V
25
60
45
mΩ
mΩ
110
VBTST – VSW when low side refresh pulse is
requested, VAVCC=4.5V
3
4
Bootstrap Refresh Comparator Threshold
Voltage
VBTST_REFRESH
V
VBTST – VSW when low side refresh pulse is
requested, VAVCC>6V
INTERNAL SOFT START (8 steps to regulation current ICHG)
SS_STEP
TSS_STEP
Soft start steps
8
step
ms
Soft start step time
1.6
3
CHARGER SECTION POWER-UP SEQUENCING
Delay from ISET above 120mV to start
tCE_DELAY
1.5
s
charging battery
INTEGRATED BTST DIODE
VF
VR
Forward Bias Voltage
Reverse breakdown voltage
IF=120mA at 25°C
IR=2uA at 25°C
0.85
V
V
20
LOGIC IO PIN CHARACTERISTICS (STAT1, STAT2, TERM_EN)
VOUT_LO
VCELL_LO
VCELL_MID
VCELL_HI
STAT Output Low Saturation Voltage
Sink Current = 5 mA
0.5
0.5
V
V
CELL pin input low threshold, 1 cell
(bq24170)
CELL pin voltage falling edge
CELL pin input mid threshold, 2 cells
(bq24170)
CELL pin voltage rising for MIN, falling for MAX
CELL pin voltage rising edge
0.8
2.5
1.8
V
V
CELL pin input high threshold, 3 cells
(bq24170)
(5) Specified by design
Copyright © 2010, Texas Instruments Incorporated
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