SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
..................................................................................................................................................
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ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
t
I
OPRECHG
V
(ISET2)
K
(ISET2)
Deglitch time for precharge to fast charge
transition,
Precharge range
Precharge set voltage, ISET2
Precharge current set factor
100 mV
≤
V
IREG-PRE
≤
100 mV,
TEST CONDITIONS
Rising voltage;
t
RISE
, t
FALL
= 100 ns, 2-mV overdrive
V
I(BAT)
< V
LOWV
, t < t
PRECHG
V
I(BAT)
< V
LOWV
, t < t
PRECHG
MIN
20
15
100
1000
TYP
30
MAX
40
200
UNIT
ms
mA
mV
V/A
V
V
IREG-PRE
Voltage regulated across R
SNS
-Accuracy
IREG*PRE
+
0.1V
RSET2
1000,
–20%
20%
(PGM) Where
1.2 kΩ
≤
RSET2
≤
10 kΩ, Select RSET1
to program V
IREG-PRE,
V
IREG-PRE
(Measured) = I
OPRE-CHG
× R
SNS
(–20% to 20% excludes errors due to RSET1
and R
SNS
tolerances)
V
I(BAT)
> V
RCH
V
I(BAT)
> V
RCH
CHARGE TERMINATION (CURRENT TAPER) DETECTION
I
TERM
V
TERM
K
(ISET2)
Charge current termination detection range
Charge termination detection set voltage,
ISET2
Termination current set factor
Charger termination accuracy
t
dg-TERM
Deglitch time for charge termination
V
I(BAT)
> V
RCH
Both rising and falling,
2-mV overdrive t
RISE
, t
FALL
= 100 ns
V
LTF
= V
O(VTSB)
× % LTF/100
V
HTF
= V
O(VTSB)
× % HTF/100
V
TCO
= V
O(VTSB)
× % TCO/100
–20%
20
30
15
100
1000
20%
40
ms
200
mA
mV
V/A
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%
LTF
%
HTF
%
TCO
Cold temperature threshold, TS, % of bias
Hot temperature threshold, TS, % of bias
Cutoff temperature threshold, TS, % of
bias
LTF hysteresis
Deglitch time for temperature fault, TS
t
dg-TS
Deglitch time for temperature fault, TS,
bq24109, bq24104
TS bias output voltage
TS bias voltage regulation accuracy
Both rising and falling,
2-mV overdrive t
RISE
, t
FALL
= 100 ns
V
CC
> V
IN(min)
,
I
(VTSB)
= 10 mA 0.1
µF
≤
C
O(VTSB)
≤
1
µF
V
CC
>
IN(min)
,
I
(VTSB)
= 10 mA 0.1
µF
≤
C
O(VTSB)
≤
1
µF
Below V
OREG
V
I(BAT)
< decreasing below threshold,
t
FALL
= 100 ns 10-mV overdrive
I
O
= 5 mA
I
O
= 10 mA
I
IL
= 5
µA
I
IH
= 20
µA
0
1.3
–10%
72.8%
33.7%
28.7%
0.5%
20
73.5%
34.4%
29.3%
1%
30
500
3.15
10%
74.2%
35.1%
29.9%
1.5%
40
ms
V
O(VTSB)
V
O(VTSB)
V
BATTERY RECHARGE THRESHOLD
V
RCH
t
dg-RCH
Recharge threshold voltage
Deglitch time
75
20
100
30
125
40
mV/cell
ms
STAT1, STAT2, AND PG OUTPUTS
V
OL(STATx)
V
OL(PG)
V
IL
V
IH
TTC INPUT
t
PRECHG
t
CHARGE
K
TTC
C
TTC
V
TTC_EN
Precharge timer
Programmable charge timer range
Charge timer accuracy
Timer multiplier
Charge time capacitor range
TTC enable threshold voltage
V
(TTC)
rising
0.01
200
t
(CHG)
= C
(TTC)
× K
(TTC)
0.01
µF
≤
C
(TTC)
≤
0.18
µF
1440
25
-10%
2.6
0.22
1800
2160
572
10%
min/nF
µF
mV
s
minutes
Low-level output saturation voltage, STATx
Low-level output saturation voltage, PG
0.5
0.1
V
CE CMODE, CELLS INPUTS
Low-level input voltage
High-level input voltage
0.4
V
CC
V
4
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