bq24160, bq24161
bq24163, bq24168
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SLUSAO0A –NOVEMBER 2011–REVISED MARCH 2012
ELECTRICAL CHARACTERISTICS
Circuit of , VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP
TJ = –40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted)
,
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
PWM switching
15
mA
VUVLO < VSUPPLY < VOVP and
VSUPPLY > VBAT+VSLP
ISUPPLY
Supply current for control (VIN or VUSB
)
PWM NOT switching
5
175
5
0°C < TJ < 85°C, High-Z Mode
μA
μA
IBATLEAK
IBAT_HIZ
Leakage current from BAT to the Supply
0°C < TJ < 85°C, VBAT = 4.2V, VUSB = VIN = 0V
0°C< TJ < 85°C, VBAT = 4.2V, VSUPPLY = 5V or 0V,
SCL, SDA = 0 V or 1.8V, High-Z Mode
Battery discharge current in High Impedance mode,
(BAT, SW, SYS)
55
μA
POWER-PATH MANAGEMENT
bq24160/1/8
3.60
3.3
3.7
3.4
3.82
3.5
VBAT < VMINSYS
bq24163
VSYS(REG)
System regulation voltage
V
VBATREG VBATREG VBATREG
Battery FET turned off
+ 1.5%
+ 3.0%
+ 4.17%
bq24160/1/8
3.4
3.5
3.62
V
V
VBAT < VMINSYS, Input current limit
or VINDPM active
VMINSYS
Minimum system regulation voltage
Enter supplement mode threshold
bq24163
3.1
3.2
3.3
VBAT
–30mV
VBSUP1
VBAT > 2.5V
V
VBAT
–10mV
VBSUP2
Exit supplement mode threshold
VBAT > 2.5V
V
A
ILIM(discharge)
tDGL(SC1)
Current limit, discharge or supplement mode
Current monitored in internal FET only.
7
Deglitch time, SYS short circuit during discharge or
supplement mode
Measured from (VBAT – VSYS) = 300mV to BAT high-
impedance
250
μs
Recovery time, SYS short circuit during discharge or
supplement mode
tREC(SC1)
60
ms
V
Battery range for BGATE and supplement mode
operation
2.5
4.5
BATTERY CHARGER
YFF pkg
RGE pkg
37
50
57
70
Measured from BAT to SYS,
VBAT = 4.2V
RON(BAT-SYS) Internal battery charger MOSFET on-resistance
mΩ
Charge Voltage
Operating in voltage regulation, Programmable range
3.5
–1%
550
4.44
1%
V
VBATREG
Voltage regulation accuracy
Fast charge current range
Fast charge current accuracy
VBATSHRT ≤ VBAT < VBAT(REG) programmable range
2500
+10%
2.1
mA
ICHARGE
0°C to 125°C
–10%
1.9
bq24161/3/8
bq24160
2.0
3.0
50
VBATSHRT
Battery short circuit threshold
Battery short circuit current
100mV Hysteresis
VBAT < VBATSHRT
V
2.9
3.1
IBATSHRT
mA
ms
Deglitch time for battery short circuit to fastcharge
transition
tDGL(BATSHRT)
32
ITERM = 50mA
–35%
–15%
+35%
+15%
ITERM
Termination charge current accuracy
ITERM ≥ 100mA
tDGL(TERM)
VRCH
tDGL(RCH)
VDETECT
Deglitch time for charge termination
Recharge threshold voltage
Deglitch time
Both rising and falling, 2mV overdrive, tRISE, tFALL = 100ns
Below VBATREG
32
120
32
ms
mV
ms
V
VBAT falling below VRCH, tFALL=100ns
During battery detection source cycle
During battery detection sink cycle
Termination enabled (EN_TERM = 1)
Battery detection threshold
3.3
3.0
2.5
IDETECT
Battery detection current before charge done (sink
current)
mA
tDETECT
VIH(CD)
VIL(CD)
Battery detection time
CD Input high logic level
CD Input low logic level
Termination enabled (EN_TERM = 1)
250
ms
V
1.3
0.4
V
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